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Space Program SJ-10 of Microgravity Research 期刊论文
MICROGRAVITY SCIENCE AND TECHNOLOGY, 2014, 卷号: 26, 期号: 3, 页码: 159-169
Authors:  Hu, WR;  Zhao, JF;  Long, M;  Zhang, XW;  Liu, QS;  Hou, MY;  Kang, Q;  Wang, YR;  Xu, SH;  Kong, WJ;  Zhang, H;  Wang, SF;  Sun, YQ;  Hang, HY;  Huang, YP;  Cai, WM;  Zhao, Y;  Dai, JW;  Zheng, HQ;  Duan, EK;  Wang, JF
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Luminescence and energy transfer of a color tunable phosphor: Dy3+-, Tm3+-, and Eu3+-coactivated KSr4(BO3)(3) for warm white UV LEDs 期刊论文
JOURNAL OF MATERIALS CHEMISTRY, 2012, 卷号: 22, 期号: 13, 页码: 6463-6470
Authors:  Wu, L;  Zhang, Y;  Gui, MY;  Lu, PZ;  Zhao, LX;  Tian, S;  Kong, YF;  Xu, JJ
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Diamond nucleation by energetic pure carbon bombardment 期刊论文
PHYSICAL REVIEW B, 2005, 卷号: 72, 期号: 3, 页码: Art.No.035402
Authors:  Yao Y;  Liao MY;  Kohler T;  Frauenheim T;  Zhang RQ;  Wang ZG;  Lifshitz Y;  Lee ST;  Yao, Y, City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: apshay@cityu.edu.hk
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Ion-beam Deposition  
Nucleation of diamond by pure carbon ion bombardment - a transmission electron microscopy study 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 6, 页码: Art.No.063103
Authors:  Yao, Y;  Liao, MY;  Wang, ZG;  Lifshitz, Y;  Lee, ST;  Lee, ST, City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: apannale@cityu.edu.hk
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Beam Deposition  
GSMBE生长SiGe/Si材料的原位掺杂控制技术 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 142-144
Authors:  黄大定;  刘超;  李建平;  高斐;  孙殿照;  朱世荣;  孔梅影
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MBE生长的跨导为186 mS/mm的AlGaN/GaN HEMT 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 4, 页码: 484-488
Authors:  王晓亮;  胡国新;  王军喜;  刘宏新;  孙殿照;  曾一平;  李晋闽;  孔梅影;  林兰英;  刘新宇;  刘键;  钱鹤
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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices 期刊论文
SOLID-STATE ELECTRONICS, 2001, 卷号: 45, 期号: 5, 页码: 751-754
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Pseudomorphic Hemts  Photoluminescence  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
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Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
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Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress