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Codoping of magnesium with oxygen in gallium nitride nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 10, 页码: Art. No. 103112
Authors:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail Address: zgwang@uestc.edu.cn;  jbli@semi.ac.cn
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Molecular-beam Epitaxy  
Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires 期刊论文
CHEMPHYSCHEM, 2010, 卷号: 11, 期号: 15, 页码: 3329-3332
Authors:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
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Silicon Nanowires  Catalytic Growth  Band Offsets  Solar-cells  Semiconductors  Superlattices  Efficiency  
Defects in gallium nitride nanowires: First principles calculations 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 4, 页码: Art. No. 044305
Authors:  Wang ZG (Wang Zhiguo);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn
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Chemical-vapor-deposition  Gan Nanowires  Native Defects  Complexes  Epitaxy  Growth  Arrays  
Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 8, 页码: Art.No.084305
Authors:  Wang ZG (Wang Zhiguo);  Gao F (Gao Fei);  Li JB (Li Jingbo);  Zu XT (Zu Xiaotao);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn;  fei.gao@pnl.gov;  jbli@semi.ac.cn
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Beta-sic Nanorods  
Structure and Electronic Properties of Saturated and Unsaturated Gallium Nitride Nanotubes 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 卷号: 113, 期号: 44, 页码: 19281-19285
Authors:  Wang ZG (Wang Zhiguo);  Wang SJ (Wang Shengjie);  Li JB (Li Jingbo);  Gao F (Gao Fei);  Weber WJ (Weber William J.);  Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China.
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Density-functional Calculations  
GSMBE生长SiGe/Si材料的原位掺杂控制技术 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 142-144
Authors:  黄大定;  刘超;  李建平;  高斐;  孙殿照;  朱世荣;  孔梅影
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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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SiGe/Si异质结双极晶体管材料外延生长及性质的研究 学位论文
, 北京: 中国科学院半导体研究所, 2001
Authors:  高斐
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Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 11, 页码: 1050
Authors:  Lin YX(林燕霞);  Huang DD(黄大定);  Zhang XL(张秀兰);  Liu JP(刘金平);  Li JP(李建平);  Gao F(高飞);  Sun DZ(孙殿照);  Ceng YP(曾一平);  Kong MY(孔梅影)
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