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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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气源分子束外延生长SiGe/Si材料的性质及HBT器件应用 学位论文
, 北京: 中国科学院半导体研究所, 2000
Authors:  林燕霞
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Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 11, 页码: 1050
Authors:  Lin YX(林燕霞);  Huang DD(黄大定);  Zhang XL(张秀兰);  Liu JP(刘金平);  Li JP(李建平);  Gao F(高飞);  Sun DZ(孙殿照);  Ceng YP(曾一平);  Kong MY(孔梅影)
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GSMBE原位生长SiGeHBT材料 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 12, 页码: 1049
Authors:  黄大定;  刘金平;  李建平;  林燕霞;  刘学锋;  李灵霄;  孙殿照;  孔梅影;  林兰英
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