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Molecular beam epitaxial growth of AlSb/InAsSb heterostructures 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 313, 页码: 479-483
Authors:  Zhang, YW;  Zhang, Y;  Guan, M;  Cui, LJ;  Li, YB;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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Size evolution and surface characterization of solid-state nanopores in different aqueous solutions 期刊论文
NANOSCALE, 2012, 卷号: 4, 期号: 5, 页码: 1572-1576
Authors:  Li, QT;  Zhao, Q;  Lu, B;  Zhang, HB;  Liu, S;  Tang, ZP;  Qu, LJ;  Zhu, R;  Zhang, JM;  You, LP;  Yang, FH;  Yu, DP
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Improved Efficiency of Organic/Inorganic Hybrid Near-Infrared Light Upconverter by Device Optimization 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2012, 卷号: 4, 期号: 9, 页码: 4976-4980
Authors:  Chu XB (Chu, Xinbo);  Guan M (Guan, Min);  Li LS (Li, Linsen);  Zhang Y (Zhang, Yang);  Zhang F (Zhang, Feng);  Li YY (Li, Yiyang);  Zhu ZP (Zhu, Zhanping);  Wang BQ (Wang, Baoqiang);  Zeng YP (Zeng, Yiping)
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Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates 期刊论文
APPLIED SURFACE SCIENCE, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Authors:  Li, YB;  Zhang, Y;  Zhang, YW;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion 期刊论文
ORGANIC ELECTRONICS, 2011, 卷号: 12, 期号: 12, 页码: 2090-2094
Authors:  Guan M (Guan Min);  Li LS (Li LinSen);  Cao GH (Cao GuoHua);  Zhang Y (Zhang Yang);  Wang BQ (Wang BaoQiang);  Chu XB (Chu Xinbo);  Zhu ZP (Zhu ZhanPing);  Zeng YP (Zeng YiPing)
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砷化镓衬底上的多层变形缓冲层的制作方法 专利
专利类型: 发明, 申请日期: 2008-06-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  高宏玲;  曾一平;  段瑞飞;  王宝强;  朱战平;  崔利杰
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Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474
Authors:  Zhang, Y;  Han, CL;  Gao, JF;  Zhu, ZP;  Wang, BQ;  Zeng, YP;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址:
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Resonant Tunnelling Diode  Molecular Beam Epitaxy  
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Authors:  Gao, HL;  Zeng, YP;  Wang, BQ;  Zhu, ZP;  Wang, ZG;  Gao, HL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址:
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Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  
铟砷/镓砷量子点的分子束外延生长方法 专利
专利类型: 发明, 申请日期: 2007-03-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴巨;  王宝强;  朱战平;  曾一平
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Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 8, 页码: 4955-4959
Authors:  Gao, HL (Gao Hong-Ling);  Li, DL (Li Dong-Lin);  Zhou, WZ (Zhou Wen-Zheng);  Shang, LY (Shang Li-Yan);  Wang, BQ (Wang Bao-Qiang);  Zhu, ZP (Zhu Zhan-Ping);  Zeng, YP (Zeng Yi-Ping);  Gao, HL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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Channel Thickness