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In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
Authors:  Gao F;  Huang DD;  Li JP;  Liu C;  Gao, F, Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Peoples R China. 电子邮箱地址: feigao@snnu.edu.cn
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Doping  
GSMBE生长SiGe/Si材料的原位掺杂控制技术 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 2, 页码: 142-144
Authors:  黄大定;  刘超;  李建平;  高斐;  孙殿照;  朱世荣;  孔梅影
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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
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Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
CHINESE PHYSICS, 2001, 卷号: 10, 期号: 10, 页码: 966-969
Authors:  Gao F;  Huang CJ;  Huang DD;  Li JP;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Shaanxi Normal Univ,Dept Phys,Xian 710062,Peoples R China.
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Ge Islands  Chemical Etching  Photoluminescence  Si2h6-ge Molecular Beam Epitaxy  Quantum Dots  
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Authors:  Gao F;  Huang DD;  Li JP;  Kong MY;  Sun DZ;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconducting Gegermanium  Semiconducting Silicon  Bipolar Transistors  Heterojunction Semiconductor Devices  Power  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Ctr Mat Sci,Inst Semicond,Beijing 10083,Peoples R China.
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Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
Authors:  Gao F;  Huang CJ;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Atomic Force Microscopy  Etching  Nanostructures  Molecular Beam Epitaxy  Semiconducting Germanium  Semiconducting Silicon  Quantum Dots  Inas  Growth  Strain  
GeSi/Si多层异质外延载流子浓度的分布 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 3, 页码: 288
Authors:  张秀兰;  朱文珍;  黄大定
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GSMBE生长的用于研制HBT的SiGe/Si异质结材料 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 8, 页码: 1035
Authors:  邹德恕;  徐晨;  陈建新;  史辰;  杜金玉;  高国;  沈光地;  黄大定;  李建平;  林兰英
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