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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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  |  
浏览/下载:1867/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics
会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:
Wang, LS
;
Zhao, LJ
;
Pan, JQ
;
Zhang, W
;
Wang, H
;
Liang, S
;
Zhu, HL
;
Wang, W
;
Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)
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  |  
浏览/下载:1397/343
  |  
提交时间:2010/03/09
P-i-n/hbt
Wave-guide
Inp/ingaas
Frequency
Hbt
Fabrication of improved FD SOIMOSFETs for suppressing edge effect
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Wang, N
;
Li, N
;
Liu, ZL
;
Yu, F
;
Li, GH
;
Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(933Kb)
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收藏
  |  
浏览/下载:1211/227
  |  
提交时间:2010/03/09
Soi
Mosfet
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
;
Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)
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  |  
浏览/下载:1517/264
  |  
提交时间:2010/03/29
Inas Quantum Dot
Photoluminescence
Modulation-doped
Field Effect Transistor
Mu-m
Capping Layer
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen Z
;
Chua SJ
;
Yuan HR
;
Liu XL
;
Lu DC
;
Han PD
;
Wang ZG
;
Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)
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  |  
浏览/下载:1506/329
  |  
提交时间:2010/10/29
Metalorganic Chemical Vapor Deposition
Semiconducting Iii-v Materials
Doped Al(x)Ga1-xn/gan Heterostructures
Carrier Confinement
Effect Transistors
Photoluminescence
Mobility
Heterojunction
Interface
Hfets
Electronic structure and optical property of semiconductor nanocrystallites
会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Xia JB
;
Chang K
;
Li SS
;
Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)
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  |  
浏览/下载:1102/297
  |  
提交时间:2010/11/15
Semiconductor Cluster
Self-assembled Quantum Dot
Diluted Magnetic Semiconductor
Electronic Structure
Resonant Tunneling
Quantum Dots
Exciton-states
Spheres
Space-grown SI-GaAs and its application
会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
作者:
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(239Kb)
  |  
收藏
  |  
浏览/下载:1780/365
  |  
提交时间:2010/10/29
Semiinsulating Gallium-arsenide
Floating-zone Growth
Crystal-growth
Zero Gravity
Microgravity
Segregation
Stoichiometry
Silicon
Defects
Insb
Space grown semi-insulating gallium arsenide single crystal and its application
会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
作者:
Chen NF
;
Zhong XR
;
Zhang M
;
Lin LY
;
Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(357Kb)
  |  
收藏
  |  
浏览/下载:1421/239
  |  
提交时间:2010/11/15
Semiinsulating Gaas
Stoichiometry
Defects
High-quality metamorphic HEMT grown on GaAs substrates by MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
;
Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)
  |  
收藏
  |  
浏览/下载:1259/394
  |  
提交时间:2010/11/15
Molecular Beam Epitaxy
High Electron Mobility Transistors
Density
Semi-insulating GaAs grown in outer space
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(158Kb)
  |  
收藏
  |  
浏览/下载:1390/315
  |  
提交时间:2010/11/15
Gaas
Outer Space
Microgravity
Integrated Circuit
Semiinsulating Gallium-arsenide
Lec-gaas
Defects
Stoichiometry
Segregation
Carbon
Boron