SEMI OpenIR

Browse/Search Results:  1-7 of 7 Help

Selected(0)Clear Items/Page:    Sort:
Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
Adobe PDF(534Kb)  |  Favorite  |  View/Download:1140/394  |  Submit date:2010/03/08
Inn  Mocvd  Mobility  
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Authors:  Lin, GQ;  Zeng, YP;  Wang, XL;  Liu, HX;  Lin, GQ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lingq@semi.ac.cn
Adobe PDF(642Kb)  |  Favorite  |  View/Download:1161/276  |  Submit date:2010/03/08
Rheed  Interlayer  Pressure  Nitrides  Layers  Mbe  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
Authors:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  Favorite  |  View/Download:1494/329  |  Submit date:2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
Authors:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  Favorite  |  View/Download:1629/451  |  Submit date:2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  Favorite  |  View/Download:1338/523  |  Submit date:2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode  
Photovoltaic effects in InGaN structures with p-n junctions 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 卷号: 204, 期号: 12, 页码: 4288-4291
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Hu, GX;  Wang, XH;  Zhang, XB;  Li, MP;  Li, JM;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.en
Adobe PDF(234Kb)  |  Favorite  |  View/Download:1316/448  |  Submit date:2010/03/08
Fundamental-band Gap  In1-xgaxn Alloys  Inn  
Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 244, 期号: 3-4, 页码: 229-235
Authors:  Luo MC;  Wang XL;  Li JM;  Liu HX;  Wang L;  Sun DZ;  Zeng YP;  Lin LY;  Luo MC,Chinese Acad Sci,Inst Semicond,Novel Semicond Mat Lab,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  Favorite  |  View/Download:1211/571  |  Submit date:2010/08/12
Atomic Force Microscopy  Raman  Transmission Electron Microscopy  Molecular Beam Epitaxy  Aluminium Nitride  Electron-affinity  Gan  Si(111)