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Molecular beam epitaxial growth of AlSb/InAsSb heterostructures 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 313, 页码: 479-483
Authors:  Zhang, YW;  Zhang, Y;  Guan, M;  Cui, LJ;  Li, YB;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Authors:  Ding, K;  Wang, CY;  Zhang, BT;  Zhang, Y;  Guan, M;  Cui, LJ;  Zhang, YW;  Zeng, YP;  Lin, Z;  Huang, F
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Effects of a ZnTe buffer layer on structural quality and morphology of CdTe epilayer grown on (001)GaAs by molecular beam epitaxy 期刊论文
VACUUM, 2012, 卷号: 86, 期号: 8, 页码: 1062-1066
Authors:  Zhao, J;  Zeng, YP;  Liu, C;  Cui, LJ
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Spin dependence of electron effective masses in InGaAs/InAlAs quantum well 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 6, 页码: 63707
Authors:  Wei LM;  Gao KH;  Liu XZ;  Zhou WZ;  Cui LJ;  Zeng YP;  Yu G;  Yang R;  Lin T;  Shang LY;  Guo SL;  Dai N;  Chu JH;  Austing DG;  Yu, G (reprint author), Shanghai Inst Tech Phys, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China,
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2-dimensional Electrons  Band Nonparabolicity  Field  Heterostructures  Subband  Gas  Magnetotransport  
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
Authors:  Yang QM;  Zhao J;  Guan M;  Liu C;  Cui LJ;  Han DJ;  Zeng YP;  Zeng, YP (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Electrical-properties  Optical-properties  Epilayers  Zn1-xcdxse  Deposition  Substrate  Znse  
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 40548
Authors:  Zhao J;  Zeng YP;  Yang QM;  Li YY;  Cui LJ;  Liu C;  Zhao, J (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Zinc Blende Cdse  Thin-films  Optical-properties  Deposition  Znse  
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Cui LJ (Cui Lijie);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, QingHua E Rd, Beijing 100083, Peoples R China. E-mail Address:
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Znte  Molecular Beam Epitaxy  Reflection High-energy Electron Diffraction  X-ray Diffraction  Atomic Force Microscopy  Vapor-phase Epitaxy  N-type Znte  Mbe Growth  100 Gaas  Znse  Layers  Surface  Temperature  Substrate  Epilayers  
Magnetoresistance in a nominally undoped InGaN thin film 期刊论文
Authors:  Ding K;  Zeng YP;  Li YY;  Cui LJ;  Wang JX;  Lu HX;  Cong PP;  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Negative Magnetoresistance  Diodes  
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址:;
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
In0.53Ga0.47As/In0.52Al0.48As量子阱二维电子气的零场自旋分裂 期刊论文
广西大学学报. 自然科学版, 2010, 卷号: 35, 期号: 6, 页码: 1027-1031
Authors:  周文政;  代娴;  林铁;  商丽燕;  崔利杰;  曾一平;  褚君浩
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