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高温退火处理提高半绝缘VGF-GaAs单晶的电学性能 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1770-1774
Authors:  占荣;  赵有文;  于会永;  高永亮;  惠峰
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Space-grown SI-GaAs and its application 会议论文
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, SMOLENICE, SLOVAKIA, JUN 30-JUL 05, 2002
Authors:  Chen NF;  Zhong XG;  Zhang M;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Semiinsulating Gallium-arsenide  Floating-zone Growth  Crystal-growth  Zero Gravity  Microgravity  Segregation  Stoichiometry  Silicon  Defects  Insb  
Space grown semi-insulating gallium arsenide single crystal and its application 会议论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4), WARSAW, POLAND, JUL, 2000
Authors:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF Acad Sinica Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Semiinsulating Gaas  Stoichiometry  Defects  
Space grown semi-insulating gallium arsenide single crystal and its application 期刊论文
IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 2002, 卷号: 29, 期号: 4, 页码: 537-540
Authors:  Chen NF;  Zhong XR;  Zhang M;  Lin LY;  Chen NF,Acad Sinica,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Semiinsulating Gaas  Stoichiometry  Defects  
Positron-annihilation study of compensation defects in InP 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
Authors:  Shan YY;  Deng AH;  Ling CC;  Fung S;  Ling CD;  Zhao YW;  Sun TN;  Sun NF;  Shan YY,Univ Hong Kong,Dept Phys,Hong Kong,Hong Kong,Peoples R China.
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Undoped Semiinsulating Inp  Indium-phosphide  Lifetime  Vacancy  Mechanisms  Acceptor  Growth  Gaas  
Point defects in III-V compound semiconductors 期刊论文
DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Authors:  Chen N;  Chen N,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100864,Peoples R China.
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Compound Semiconductors  Point Defects  Deep Level Centres  Stoichiometry  Molecular-beam Epitaxy  Gaas Single-crystals  Semiinsulating Gallium-arsenide  Semi-insulating Gaas  Electrical-properties  Lattice-parameter  Native Defects  Carbon  Diffractometer  Stoichiometry  
Semi-insulating GaAs grown in outer space 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
Authors:  Chen NF;  Zhong XR;  Lin LY;  Xie X;  Zhang M;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Gaas  Outer Space  Microgravity  Integrated Circuit  Semiinsulating Gallium-arsenide  Lec-gaas  Defects  Stoichiometry  Segregation  Carbon  Boron  
Semi-insulating GaAs grown in outer space 期刊论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 卷号: 75, 期号: 2-3, 页码: 134-138
Authors:  Chen NF;  Zhong XR;  Lin LY;  Xie X;  Zhang M;  Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gaas  Outer Space  Microgravity  Integrated Circuit  Semiinsulating Gallium-arsenide  Lec-gaas  Defects  Stoichiometry  Segregation  Carbon  Boron  
Stoichiometry in GaAs grown in outer space measured nondestructively 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
Authors:  Chen NF;  Zhong XG;  Lin LY;  Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
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Semiinsulating Gallium-arsenide  Crystals  Defects  
Structural properties of SI-GaAs grown in space 会议论文
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10), NAGOYA, JAPAN, JUL 12-19, 1998
Authors:  Chen NF;  Wang YT;  Zhong XR;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
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Semiinsulating Gallium-arsenide  Microgravity  Stoichiometry