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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
Authors:  Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang;  J. Kono;  W. K. Lou;  K. Chang;  S. D. Hawkins;  J. F. Klem;  W. Pan;  D. Smirnov;  Z. Jiang
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Landau levels and magneto-transport property of monolayer phosphorene 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 12295
Authors:  X. Y. Zhou;  R. Zhang;  J. P. Sun;  Y. L. Zou;  D. Zhang;  W. K. Lou;  F. Cheng;  G. H. Zhou;  F. Zhai;  Kai Chang
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Electronic and magneto-optical properties of monolayer phosphorene quantum dots 期刊论文
2D Materials, 2015, 卷号: 2, 期号: 4, 页码: 045012
Authors:  Rui Zhang;  X Y Zhou;  D Zhang;  W K Lou;  F Zhai;  Kai Chang
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Strain-Induced Pseudomagnetic Fields in Twisted Graphene Nanoribbons 期刊论文
PHYSICAL REVIEW LETTERS, 2014, 卷号: 112, 期号: 9, 页码: 096805
Authors:  Zhang, DB;  Seifert, G;  Chang, K
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Coexistence and decoupling of bulk and edge states in disordered two-dimensional topological insulators 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 90, 期号: 5, 页码: 054205
Authors:  Zhang, YY;  Shen, M;  An, XT;  Sun, QF;  Xie, XC;  Chang, K;  Li, SS
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Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells 期刊论文
PHYSICAL REVIEW LETTERS, 2014, 卷号: 112, 期号: 21, 页码: 216803
Authors:  Zhang, HJ;  Xu, Y;  Wang, J;  Chang, K;  Zhang, SC
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Observation of valley-dependent beams in photonic graphene 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 19, 页码: 23605-23613
Authors:  Deng, FS;  Sun, Y;  Wang, X;  Xue, R;  Li, Y;  Jiang, HT;  Shi, YL;  Chang, K;  Chen, H
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Observation of valley-dependent beams in photonic graphene 期刊论文
OPTICS EXPRESS, 2014, 卷号: 22, 期号: 19, 页码: 23605-23613
Authors:  Deng, FS;  Sun, Y;  Wang, X;  Xue, R;  Li, Y;  Jiang, HT;  Shi, YL;  Chang, K;  Chen, H
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Single- and few-electron states in topological-insulator quantum dots 期刊论文
PHYSICAL REVIEW B, 2014, 卷号: 90, 期号: 11, 页码: 115303
Authors:  Li, J;  Lou, WK;  Zhang, D;  Li, XJ;  Yang, W;  Chang, K
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Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well 期刊论文
PHYSICAL REVIEW LETTERS, 2012, 卷号: 109, 期号: 18, 页码: 186803
Authors:  Miao MS (Miao, M. S.);  Yan Q (Yan, Q.);  Van de Walle CG (Van de Walle, C. G.);  Lou WK (Lou, W. K.);  Li LL (Li, L. L.);  Chang K (Chang, K.)
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