Semi-insulating GaAs grown in outer space

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Semi-insulating GaAs grown in outer space
	Chen NF; Zhong XR; Lin LY; Xie X; Zhang M; Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	IUMRS International Conference of Advanced Materials
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3)
页码	134-138
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; cast, lanzhou inst phys, lanzhou 625065, peoples r china; hebei inst semicond, shijiazhuang 050002, hebei, peoples r china
摘要	A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.
关键词	Gaas Outer Space Microgravity Integrated Circuit Semiinsulating Gallium-arsenide Lec-gaas Defects Stoichiometry Segregation Carbon Boron
学科领域	半导体材料
主办者	IUMRS.; Amer Xtal Technol.; SUT Associates.; Univ Calif San Diego.; Shanghai Inst Met.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14997
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen NF,Zhong XR,Lin LY,et al. Semi-insulating GaAs grown in outer space[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:134-138.

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