SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Semi-insulating GaAs grown in outer space
Chen NF; Zhong XR; Lin LY; Xie X; Zhang M; Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
2000
Conference NameIUMRS International Conference of Advanced Materials
Source PublicationMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3)
Pages134-138
Conference DateJUN 13-18, 1999
Conference PlaceBEIJING, PEOPLES R CHINA
Publication PlacePO BOX 564, 1001 LAUSANNE, SWITZERLAND
PublisherELSEVIER SCIENCE SA
ISSN0921-5107
AbstractA semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; cast, lanzhou inst phys, lanzhou 625065, peoples r china; hebei inst semicond, shijiazhuang 050002, hebei, peoples r china
KeywordGaas Outer Space Microgravity Integrated Circuit Semiinsulating Gallium-arsenide Lec-gaas Defects Stoichiometry Segregation Carbon Boron
Funding OrganizationIUMRS.; Amer Xtal Technol.; SUT Associates.; Univ Calif San Diego.; Shanghai Inst Met.
Subject Area半导体材料
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14997
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorChen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Chen NF,Zhong XR,Lin LY,et al. Semi-insulating GaAs grown in outer space[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:134-138.
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