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The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices 期刊论文
SOLID-STATE ELECTRONICS, 2001, 卷号: 45, 期号: 5, 页码: 751-754
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Pseudomorphic Hemts  Photoluminescence  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:951/394  |  Submit date:2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  Favorite  |  View/Download:1167/426  |  Submit date:2010/11/15
Molecular Beam Epitaxy  Mobility  
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Wang XG;  Chang Y;  Chu JH;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)  |  Favorite  |  View/Download:1388/521  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  Electron-mobility Transistor  Carrier Density  Quantum-wells  Band-gap  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 210-213
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:846/235  |  Submit date:2010/08/12
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 127-131
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(106Kb)  |  Favorite  |  View/Download:1042/343  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Mobility