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Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 卷号: 27, 期号: 3, 页码: 314-318
Authors:  Chen, Z;  Chua, SJ;  Han, PD;  Liu, XL;  Lu, DC;  Zhu, QS;  Wang, ZG;  Tripathy, S;  Tripathy, S, Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore. 电子邮箱地址: tripathy-sudhiranjan@imre.a-star.edu.sg
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Gan  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
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Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508
Authors:  Chen, Z;  Chua, SJ;  Yuan, HR;  Liu, XL;  Lu, DC;  Han, PD;  Wang, ZG;  Chen, Z, Singapore MIT Alliance, AMMNS, E4-04-10,NUS,4 Engn Dr,3, Singapore 117576, Singapore. 电子邮箱地址: smacz@nus.edu.sg
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Metalorganic Chemical Vapor Deposition  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
Authors:  Li Q;  Fang ZL;  Xu SJ;  Li GH;  Xie MH;  Tong SY;  Zhang XH;  Liu W;  Chua SJ;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
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Piezoelectric Field  Photoluminescence  Temperature  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 期刊论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 卷号: 235, 期号: 2, 页码: 427-431
Authors:  Li Q;  Fang ZL;  Xu SJ;  Li GH;  Xie MH;  Tong SY;  Zhang XH;  Liu W;  Chua SJ;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Piezoelectric Field  Photoluminescence  Temperature  
Self-aligned current aperture in native oxidized AlInAs buried heterostructure InGaAsP/InP distributed feedback laser 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 76, 期号: 12, 页码: 1492-1494
Authors:  Wang ZJ;  Chua SJ;  Zhang ZY;  Zhou F;  Zhang JY;  Wang XJ;  Wang W;  Zhu HL;  Wang ZJ,Inst Mat Res & Engn,3 Res Link,Singapore 117602,Singapore.
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Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer 期刊论文
APPLIED PHYSICS LETTERS, 1998, 卷号: 73, 期号: 26, 页码: 3803-3805
Authors:  Wang ZJ;  Chua SJ;  Zhou F;  Wang W;  Wu RH;  Wang ZJ,Natl Univ Singapore,Inst Mat Res & Engn,Singapore 119260,Singapore.
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Surface-emitting Lasers  Ultralow Threshold  Oxide  Inp  Diodes  Oxidation