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Analysis of leakage current in GaAs micro-solar cell arrays 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 卷号: 53, 期号: 5, 页码: 1240-1246
Authors:  Wang YS (Wang YanShuo);  Chen NF (Chen NuoFu);  Zhang XW (Zhang XingWang);  Bai;  YM (Bai YiMing);  Wang Y (Wang Yu);  Huang TM (Huang TianMao);  Zhang H (Zhang Han);  Shi HW (Shi HuiWei);  Wang, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yswang@semi.ac.cn;  nfchen@semi.ac.cn
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Micro-solar Cell  Mems (Micro-electromechanical Systems)  Leakage Current  Recombination  Voltage  
Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 卷号: 52, 期号: 5, 页码: 1176-1180
Authors:  Liu L;  Chen NF;  Bai YM;  Cui M;  Zhang H;  Gao FB;  Yin ZG;  Zhang XW;  Liu L Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: lliu@semi.ac.cn
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Quantum Efficiency  Temperature Coefficient  Solar Cell  
Temperature dependent spectral response characteristic of III-V compound tandem cell 期刊论文
CHINESE SCIENCE BULLETIN, 2009, 卷号: 54, 期号: 3, 页码: 353-357
Authors:  Liu L;  Chen NF;  Wang Y;  Bai YM;  Cui M;  Gao FB;  Liu L Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: lliu@semi.ac.cn
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Spectral Response  Tandem Cell  Temperature Coefficient  
Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 7, 页码: Art. No. 073712
Authors:  Gao FB;  Chen NF;  Zhang XW;  Wang Y;  Liu L;  Yin ZG;  Wu JL;  Gao, FB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fbgao@semi.ac.cn
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Molecular-beam Epitaxy  
Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Liu L;  Chen NF;  Gao FB;  Yin ZG;  Bai YM;  Zhang XW;  Liu, L, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Thermophotovoltaic Cell  
Net-like ferromagnetic MnSb film deposited on porous silicon substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:  Dai RX (Dai Ruixuan);  Chen NF (Chen NuoFu);  Zhang XW (Zhang X. W.);  Peng CT (Peng, Changtao);  Dai, RX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: rxdai@red.semi.ac.cn
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Physical Vapor Deposition Processes  
p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 20, 页码: Art.No.202102
Authors:  Wang P (Wang Peng);  Chen NF (Chen Nuofu);  Yin ZG (Yin Zhigang);  Dai RX (Dai Ruixuan);  Bai YM (Bai Yiming);  Wang, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pwang@semi.ac.cn
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Zno Thin-films  Mgxzn1-xo  Devices  Alloy  
As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.043704
Authors:  Wang P (Wang Peng);  Chen NF (Chen Nuofu);  Yin ZG (Yin Zhigang);  Yang F (Yang Fei);  Peng CT (Peng Changtao);  Dai RX (Dai Ruixuan);  Bai YM (Bai Yiming);  Wang, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pwang@semi.ac.cn
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Ray-photoelectron-spectroscopy  Inas Surfaces  Fabrication  Deposition  Layers  Oxide  
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.242108
Authors:  Peng CT;  Chen NF;  Gao FB;  Zhang XW;  Chen CL;  Wu JL;  Yu YD;  Peng, CT, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ctpeng@red.semi.ac.cn
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Molecular-beam Epitaxy  Chemical-vapor-deposition  Energy-gap  100 Gaas  Inassb  Inas1-xsbx  Alloys  Insb  Transport  Layers  
P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 15, 页码: Art.No.152102
Authors:  Wang P;  Chen NF;  Yin ZG;  Wang, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pwang@semi.ac.cn
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