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| InGaN量子阱及薄膜材料特性研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors: 刘炜
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Ingan 量子阱 薄膜 极化效应 局域态 本底载流子浓度 |
| 17 000%/W second-harmonic conversion efficiency in single-crystalline aluminum nitride microresonators 期刊论文
Physics, 2018, 卷号: 113, 页码: 131102
Authors: Alexander W. Bruch; Xianwen Liu; Xiang Guo; Joshua B. Surya; Zheng Gong; Liang Zhang; Junxi Wang; Jianchang Yan; Hong X. Tang
Adobe PDF(1476Kb) | Favorite | View/Download：21/0 | Submit date：2019/11/12 |
| Ultra-high-Q UV microring resonators based on single-crystalline AlN platform 期刊论文
Physics, 2018, 卷号: 5, 期号: 10, 页码: 1279-1282
Authors: Xianwen Liu; Alexander W. Bruch; Zheng Gong; Juanjuan Lu; Joshua B.Surya; Liang Zhang; Junxi Wang; Jianchang Yan; Hong X. Tang
Adobe PDF(1671Kb) | Favorite | View/Download：26/0 | Submit date：2019/11/12 |
| Diamine anchored molecular junctions of oligo(phenylene ethynylene) cruciform 期刊论文
CHINESE CHEMICAL LETTERS, 2018, 卷号: 29, 期号: 2, 页码: 271-275
Authors: Yuqing Liu; Marco Santella ; Zhiqiang Fan ; Xintai Wang ; Xiangwei Jiang ; Mogens Brøndsted Nielsen ; Kasper Nørgaard ; Bo W. Laursen ; Jingbo Li ; Zhongming Wei
Adobe PDF(972Kb) | Favorite | View/Download：24/0 | Submit date：2019/11/18 |
| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
Adobe PDF(1681Kb) | Favorite | View/Download：28/0 | Submit date：2019/11/19 |
| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
Adobe PDF(1424Kb) | Favorite | View/Download：28/0 | Submit date：2019/11/19 |
| The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
Adobe PDF(1110Kb) | Favorite | View/Download：24/0 | Submit date：2019/11/19 |
| Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors: S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du
Adobe PDF(1754Kb) | Favorite | View/Download：29/1 | Submit date：2019/11/19 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
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| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
Adobe PDF(723Kb) | Favorite | View/Download：487/0 | Submit date：2018/07/11 |
