| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms | |
| J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li | |
| 2018 | |
| Source Publication | SUPERLATTICES AND MICROSTRUCTURES
 |
| Volume | 113Pages:34-40 |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29336 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li. Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,113:34-40. |
| APA | J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li.(2018).Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms.SUPERLATTICES AND MICROSTRUCTURES,113,34-40. |
| MLA | J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li."Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms".SUPERLATTICES AND MICROSTRUCTURES 113(2018):34-40. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 杨静 2018 SM Enhanceme（1681KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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