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Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 18, 页码: 183901
Authors:  Liu, X;  Zhang, X. W.;  Yin, Z. G.;  Meng, J. H.;  Gao, H. L.;  Zhang, L. Q.;  Zhao, Y. J.;  Wang, H. L.
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Plasmon enhanced polymer solar cells by spin-coating Au nanoparticles on indium-tin-oxide substrate 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 133903
Authors:  Gao HL (Gao, H. L.);  Zhang XW (Zhang, X. W.);  Yin ZG (Yin, Z. G.);  Tan HR (Tan, H. R.);  Zhang SG (Zhang, S. G.);  Meng JH (Meng, J. H.);  Liu X (Liu, X.)
Adobe PDF(1884Kb)  |  Favorite  |  View/Download:870/276  |  Submit date:2013/03/27
Ordered ZnO nanorods-based heterojunction light-emitting diodes with graphene current spreading layer 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 12, 页码: 121104
Authors:  Zhang SG (Zhang, S. G.);  Zhang XW (Zhang, X. W.);  Si FT (Si, F. T.);  Dong JJ (Dong, J. J.);  Wang JX (Wang, J. X.);  Liu X (Liu, X.);  Yin ZG (Yin, Z. G.);  Gao HL (Gao, H. L.)
Adobe PDF(843Kb)  |  Favorite  |  View/Download:930/355  |  Submit date:2013/03/27
Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO(2) film near the metal-insulator transition region 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 24, 页码: 241903
Authors:  Li WW (Li W. W.);  Yu Q (Yu Q.);  Liang JR (Liang J. R.);  Jiang K (Jiang K.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
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Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 19, 页码: Art. No. 193511
Authors:  Lin L (Lin L.);  Zhen HL (Zhen H. L.);  Li N (Li N.);  Lu W (Lu W.);  Weng QC (Weng Q. C.);  Xiong DY (Xiong D. Y.);  Liu FQ (Liu F. Q.);  Lu, W, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: luwei@mail.sitp.ac.cn
Adobe PDF(347Kb)  |  Favorite  |  View/Download:1122/284  |  Submit date:2010/12/12
Detectors  
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 11, 页码: Art.No.112106
Authors:  Zhao DG (Zhao D. G.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Jiang DS (Jiang D. S.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Wang YT (Wang Y. T.);  Liang JW (Liang J. W.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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X-ray-diffraction  Scattering  Growth  Layers  
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 25, 页码: Art.No.252101
Authors:  Zhao DG (Zhao D. G.);  Jiang DS (Jiang D. S.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Liang JW (Liang J. W.);  Hao XP (Hao X. P.);  Wei L (Wei L.);  Li X (Li X.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(177Kb)  |  Favorite  |  View/Download:1227/433  |  Submit date:2010/04/11
Yellow Luminescence  Electron-beam  Vacancies