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| Quantum oscillations in a two-dimensional electron system under low-frequency microwave irradiation 期刊论文 PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 235437 Authors: Jian Mi; Huiying Liu; Junren Shi; L. N. Pfeiffer; K. W. West; K. W. Baldwin; Chi Zhang
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| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文 JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010 Authors: 阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
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| Optical properties of Mn+ doped GaAs 期刊论文 OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 卷号: 4, 期号: 6, 页码: 784-787 Authors: Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Liao SZ (Liao Shuzhi); Zhang FS (Zhang Fasheng); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo)
Adobe PDF(224Kb)  |   Favorite  |  View/Download:1261/266  |  Submit date:2010/08/17 Photoluminescence Ion implantatIon Manganese Gaas Ion-implantation Semiconductors Centers Dots |
| 以二氧化硅为掩模定位生长量子点的方法 专利 专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11 Inventors: 任芸芸; 徐波 ; 周惠英; 刘明; 李志刚; 王占国
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| 在半导体衬底上制备有序砷化铟量子点的方法 专利 专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11 Inventors: 周慧英; 曲胜春; 金鹏 ; 徐波 ; 王赤云; 刘俊朋; 王智杰; 王占国
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| 在半导体衬底上制备量子环结构的方法 专利 专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11 Inventors: 周慧英; 曲胜春; 鹏; 徐波 ; 王赤云; 刘俊朋; 王占国
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