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Quantum oscillations in a two-dimensional electron system under low-frequency microwave irradiation 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 235437
Authors:  Jian Mi;   Huiying Liu;   Junren Shi;   L. N. Pfeiffer;   K. W. West;   K. W. Baldwin;   Chi Zhang
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 572-575, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  阎Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Jin P (Jin Peng);  Xu B (Xu Bo);  Ye XL (Ye Xiaoling);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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Optical properties of Mn+ doped GaAs 期刊论文
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 卷号: 4, 期号: 6, 页码: 784-787
Authors:  Zhou HY (Zhou Huiying);  Qu SC (Qu Shengchun);  Liao SZ (Liao Shuzhi);  Zhang FS (Zhang Fasheng);  Liu JP (Liu Junpeng);  Wang ZG (Wang Zhanguo)
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Photoluminescence  Ion implantatIon  Manganese  Gaas  Ion-implantation  Semiconductors  Centers  Dots  
以二氧化硅为掩模定位生长量子点的方法 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  任芸芸;  徐波;  周惠英;  刘明;  李志刚;  王占国
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在半导体衬底上制备有序砷化铟量子点的方法 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  金鹏;  徐波;  王赤云;  刘俊朋;  王智杰;  王占国
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在半导体衬底上制备量子环结构的方法 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  ;  徐波;  王赤云;  刘俊朋;  王占国
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