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The compensation role of deep defects in the electric properties of lightly Si-doped GaN 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 773, 页码: 1182-1186
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   M. Li
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The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文
Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177
Authors:  H.R. Qi ;   S. Zhang ;   S.T. Liu ;   F. Liang ;   L.K. Yi ;   J.L. Huang ;   M. Zhou ;   Z.W. He ;   D.G. Zhao ;   D.S. Jiang
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Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer 期刊论文
Optics and Laser Technology, 2019, 卷号: 111, 页码: 810-813
Authors:  J. Yang ;   D.G. Zhao ;  D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   S.T. Liu ;   M. Li
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors:  J. Yang ;   D.G. Zhao;   D.S. Jiang ;   S.T. Liu ;   P. Chen ;   J.J. Zhu ;   F. Liang ;   W. Liu ;   M. Li
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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 690-695
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 765, 页码: 245-248
Authors:  H.R. Qi ;   L.K. Yi ;   J.L. Huang ;   S.T. Liu ;   F. Liang ;   M. Zhou ;   D.G. Zhao ;   D.S. Jiang
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Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
Authors:  S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  X. Li;  W. Liu;  L.Q. Zhang;  H. Long;  M. Li
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Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  W. Liu;  F. Liang;  X. Li;  S.T. Liu;  L.Q. Zhang;  H. Yang
Adobe PDF(763Kb)  |  Favorite  |  View/Download:47/0  |  Submit date:2018/11/30