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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科学... [1]
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Funding Organization：The authors are grateful to Professor Huanhua Wang and Dr. Tieying Yang of the Institute of High Energy Physics, Chinese Academy of Science. This work was supported by National Science Foundation of China (No. 60776015, 60976008), the Special Funds for Major State Basic Research Project (973 program) of China (No. 2006 CB604907), and the 863 High Technology R&D Program of China (No. 2007AA03Z402,2007AA03Z451).
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Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
期刊论文
NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343
Authors:
Liu JM (Liu J. M.)
;
Liu XL (Liu X. L.)
;
Xu XQ (Xu X. Q.)
;
Wang J (Wang J.)
;
Li CM (Li C. M.)
;
Wei HY (Wei H. Y.)
;
Yang SY (Yang S. Y.)
;
Zhu QS (Zhu Q. S.)
;
Fan YM (Fan Y. M.)
;
Zhang XW (Zhang X. W.)
;
Wang ZG (Wang Z. G.)
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Submit date：2010/08/17
Valence Band Offset
W-inn/h-bn Heterojunction
X-ray Photoelectron Spectroscopy
Conduction Band Offset
Valence Band Offset
Negative Electron-affinity
Indium Nitride
Wurtzite Gan
Surface
Film
Aln
Transport
Emission
Naxwo3
Growth
