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绿光InGaN/GaN多量子阱发光特性研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  刘炜
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Ultralow-frequency Raman system down to 10 cm(-1) with longpass edge filters and its application to the interface coupling in t(2+2)LGs 期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2016, 卷号: 87, 页码: 053122
Authors:  M.-L. Lin;  F.-R. Ran;  X.-F. Qiao;  J.-B. Wu;  W. Shi;  Z.-H. Zhang;  X.-Z. Xu;  K.-H. Liu;  H. Li;  P.-H. Tan
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  X. Li;  S. T. Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79
Authors:  F. Liang;  P. Chen;  D.G. Zhao;  D.S. Jiang;  Z.S. Liu;  J.J. Zhu;  J. Yang;  W. Liu;  X.G. He;  X.J. Li;  X. Li;  S.T. Liu;  H. Yang;  L.Q. Zhang;  J.P. Liu;  Y.T. Zhang;  G.T. Du
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The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
Authors:  X. Li;  D. G. Zhao*;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  J. Yang;  W. Liu;  X. G. He;  X. J. Li;  F. Liang;  L. Q. Zhang;  J. P. Liu;  H. Yang
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980 nm 大功率基横模分布反馈激光器 期刊论文
中国激光, 2016, 卷号: 43, 期号: 2, 页码: 26-32
Authors:  张奇;  赵懿昊;  董振;  王翠鸾;  李伟;  刘素平;  马骁宇
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980 nm 大功率基横模分布反馈激光器 期刊论文
中国激光, 2016, 卷号: 43, 期号: 2, 页码: 26-32
Authors:  张奇;  赵懿昊;  董振;  王翠鸾;  李伟;  刘素平;  马骁宇
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XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors:  F. Liang;  P. Chen;  D. G. Zhao;  D. S. Jiang;  Z. J. Zhao;  Z. S. Liu;  J. J. Zhu;  J. Yang;  L. C. Le;  W. Liu;  X.G. He;  X. J. Li;  X Li;  S. T Liu;  H. Yang;  J. P. Liu;  L. Q. Zhang;  Y. T. Zhang;  G. T. Du
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Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 2, 页码: 025324
Authors:  R. W. Wu;  G. D. Yuan;  K. C. Wang;  T. B. Wei;  Z. Q. Liu;  G. H. Wang;  J. X. Wang;  J. M. Li
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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
AIP ADVANCES, 2016, 卷号: 6, 页码: 035124
Authors:  P. Chen;  D. G. Zhao;  D. S. Jiang;  J. J. Zhu;  Z. S. Liu;  J. Yang;  X. Li;  L. C. Le;  X. G. He;  W. Liu;  X. J. Li;  F. Liang;  B. S. Zhang;  H. Yang;  Y. T. Zhang;  G. T. Du
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