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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
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A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
Authors:  X. Li;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  M. Shi;  D.M. Zhao;  W. Liu;  J.J. Zhu;  S.M. Zhang;  H. Yang
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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors:  W. Liu;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  M. Shi;  D. M.Zhao;  X. Li;  J. P. Liu;  S. M. Zhang;  H. Wang;  H. Yang;  Y. T. Zhang;  G. T.Du
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Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
APPLIED OPTICS, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  L. C. LE;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  L. Q. ZHANG;  J. Q. LIU;  H. YANG
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The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 88, 页码: 50-55
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  X. Li;  F. Liang;  J.P. Liu;  S.M. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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