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| Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors: W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
 Adobe PDF(801Kb) |  Favorite | View/Download：317/4 | Submit date：2016/03/23 |
| A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
Authors: X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
Adobe PDF(905Kb) | Favorite | View/Download：281/2 | Submit date：2016/03/23 |
| Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors: W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
Adobe PDF(1377Kb) | Favorite | View/Download：228/1 | Submit date：2016/03/23 |
| Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
APPLIED OPTICS, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG
Adobe PDF(984Kb) | Favorite | View/Download：296/2 | Submit date：2016/03/23 |
| The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 88, 页码: 50-55
Authors: W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du
Adobe PDF(575Kb) | Favorite | View/Download：405/1 | Submit date：2016/03/23 |
