| Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer | |
| J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li | |
| 2019 | |
| Source Publication | Optics and Laser Technology
 |
| Volume | 111Pages:810-813 |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29524 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer[J]. Optics and Laser Technology,2019,111:810-813. |
| APA | J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li.(2019).Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer.Optics and Laser Technology,111,810-813. |
| MLA | J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li."Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer".Optics and Laser Technology 111(2019):810-813. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Enhancing the perfor（1171KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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