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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells 期刊论文
Optical Materials, 2018, 卷号: 86, 页码: 460-463
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer 期刊论文
Authors:  S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79
Authors:  F. Liang;  P. Chen;  D.G. Zhao;  D.S. Jiang;  Z.S. Liu;  J.J. Zhu;  J. Yang;  W. Liu;  X.G. He;  X.J. Li;  X. Li;  S.T. Liu;  H. Yang;  L.Q. Zhang;  J.P. Liu;  Y.T. Zhang;  G.T. Du
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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
Superlattices and Microstructures, 2016, 卷号: 97, 页码: 186-192
Authors:  X. Li;  D.G. Zhao;  J. Yang;  D.S. Jiang;  Z.S. Liu;  P. Chen;  J.J. Zhu;  W. Liu;  X.G. He;  X.J. Li;  F. Liang;  L.Q. Zhang;  J.P. Liu;  H. Yang;  Y.T. Zhang;  G.T. Du
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Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 681, 页码: 522-526
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  J.P. Liu;  L.Q. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  X.G. He;  X.J. Li;  H. Yang;  Y.T. Zhang;  G.T. Du
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The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  X. Li;  F. Liang;  J.P. Liu;  S.M. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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钨丝掩模大角度倾斜离子注入850nm垂直腔面发射激光器及其高频调制特性 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 9, 页码: 1143-1147
Authors:  王海嵩;  杜国同;  许成栋;  宋俊峰;  唐君;  陈弘达;  刘宇;  祝宁华
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钨丝掩模二次倾斜离子注入850 nm室温连续垂直腔面发射激光器 期刊论文
中国激光, 2004, 卷号: 31, 期号: 2, 页码: 129-132
Authors:  王海嵩;  杜国同;  崔宏峰;  许呈栋;  宋俊峰;  杜云;  陈弘达;  吴荣汉
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适于InGaAsP光放大器偏振不灵敏的增益介质 期刊论文
中国激光, 2003, 卷号: 30, 期号: 1, 页码: 53-56
Authors:  殷景志;  刘素萍;  刘宗顺;  王新强;  殷宗友;  李正庭;  杨树人;  杜国同
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