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Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文
Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8308, 页码: 83081Y
Authors:  Huang, Wenchao;  Xia, Hui;  Wang, Shaowei;  Deng, Honghai;  Wei, Peng;  Li, Lu;  Liu, Fengqi;  Li, Zhifeng;  Li, Tianxin;  Huang, W.(
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Capacitance  Carrier Concentration  Characterization  Diffusion  Optoelectronic Devices  Photodetectors  Scanning  Semiconductor Device Structures  Semiconductor Devices  Semiconductor Quantum Wells  Thermionic Emission  
A novel parallel random number generator for wireless medical security applications 期刊论文
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011, 页码: 6117706
Authors:  Liu, Weiyang;  Wu, Nanjian;  Liu, W.
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Calcium  Cellular Automata  Energy Efficiency  Gallium  Genetic Algorithms  Number Theory  Shift Registers  Solid State Devices  State Feedback  Statistical Tests  
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots 期刊论文
Physica E: Low-Dimensional Systems and Nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
Authors:  Li, Y.Q.;  Wang, X.D.;  Xu, X.N.;  Liu, W.;  Yang, F.H.;  Zeng, Y.P.;  Wang, X.D.(
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Electron Absorption  Indium Arsenide  Logic Circuits  Modfets  Modulation  Two Dimensional Electron Gas  
Target detection against strong light based on gate viewing 期刊论文
Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8200, 页码: 82000V
Authors:  Xinwei, Wang;  Yan, Zhou;  Songtao, Fan;  Yuliang, Liu;  Xinwei, W.(
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Optical Instruments  Target Tracking  Technology  
T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(
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Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses