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Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Authors:  Gao F;  Huang DD;  Li JP;  Kong MY;  Sun DZ;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Semiconducting Gegermanium  Semiconducting Silicon  Bipolar Transistors  Heterojunction Semiconductor Devices  Power  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
Authors:  Gao F;  Huang CJ;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(156Kb)  |  Favorite  |  View/Download:1241/305  |  Submit date:2010/08/12
Atomic Force Microscopy  Etching  Nanostructures  Molecular Beam Epitaxy  Semiconducting Germanium  Semiconducting Silicon  Quantum Dots  Inas  Growth  Strain  
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(107Kb)  |  Favorite  |  View/Download:1082/308  |  Submit date:2010/08/12
Gsmbe  Sige Alloy  Doping  Sims  Hbt  Current Gain  Si  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Sun DZ;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(113Kb)  |  Favorite  |  View/Download:867/267  |  Submit date:2010/08/12
Si Growth Rate  p Doping  Ph3 Flow Rate  p Segregation  Gsmbe  Chemical-vapor-deposition  Si1-xgex  Phosphorus  Si2h6  Disilane  Si(100)  Mbe