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Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)  |  收藏  |  浏览/下载：1704/419  |  提交时间：2010/11/15
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:  Liu JP;  Kong MY;  Huang DD;  Li JP;  Sun DZ;  Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：869/0  |  提交时间：2010/10/29
Strain-shift Coefficients  Si1-xgex  Silicon  Phonons  
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu JP;  Kong MY;  Liu XF;  Li JP;  Huang DD;  Li LX;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1413/272  |  提交时间：2010/11/15
Stranski-krastanow Growth  Quantum Dots  Relaxation  Inas  
Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition 会议论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 177, CAIRNS, AUSTRALIA, JUL 27-AUG 01, 1997
作者:  Yao ZY;  Jiang H;  Liu ZK;  Huang DD;  Qin FG;  Zhu SC;  Sun YX;  Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
Adobe PDF(166Kb)  |  收藏  |  浏览/下载：1329/281  |  提交时间：2010/11/15
Thin Films  Saturation Magnetization  Uniaxial Anisotropy