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Advanced rechargeable lithium-ion batteries based on bendable ZnCo2O4-urchins-on-carbon-fibers electrodes 期刊论文
Nano Research, 2013, 卷号: 6, 期号: 7, 页码: 525-534
Authors:  Bin Liu, Xianfu Wang, Boyang Liu, Qiufan Wang, Dongsheng Tan, Weifeng Song, Xiaojuan Hou, Di Chen, Guozhen Shen
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Highly Reversible Lithium Storage in Hierarchical Ca2Ge7O16 Nanowire Arrays_Carbon Textile Anodes 期刊论文
Chemistry - A European Journal, 2013, 卷号: 19, 期号: 26, 页码: 8650–8656
Authors:  Wenwu Li,Xianfu Wang,Bin Liu, Sijun Luo,Zhe Liu,Xiaojuan Hou,Qingyi Xiang,Di Chen, and Guozhen Shen
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SnO2-microtube-assembled cloth for fully flexible self-powered photodetector nanosystems 期刊论文
Nanoscale, 2013, 卷号: 5, 期号: 17, 页码: 7831-7837
Authors:  Hou, Xiaojuan;  Liu, Bin;  Wang, Xianfu;  Wang, Zhuoran;  Wang, Qiufan;  Chen, Di;  Shen, Guozhen
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Structure optimization of field-plate AlGaN/GaN HEMTs 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 2, 页码: 272-274
Authors:  Luo WJ (Luo Weijun);  Wei K (Wei Ke);  Chen XJ (Chen Xiaojuan);  Li CZ (Li Chengzhan);  Liu XY (Liu Xinyu);  Wang XL (Wang Xiaoliang);  Luo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址:
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AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 514-517
Authors:  Yao Xiaojiang;  Li Bin;  Chen Yanhu;  Chen Xiaojuan;  Wei Ke;  Li Chengzhan;  Luo Weijun;  WANG Xiaoliang;  Liu Dan;  Liu Guoguo;  Liu Xinyu
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高性能1mm SiC基AlGaN/GaN功率HEMT研制 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1981-1983
Authors:  罗卫军;  陈晓娟;  李成瞻;  刘新宇;  和致经;  魏珂;  梁晓新;  王晓亮
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A Radial Stub Test Circuit for Microwave Power Devices 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1557-1561
Authors:  Luo Weijun;  Chen Xiaojuan;  Liang Xiaoxin;  Ma Xiaolin;  Liu Xinyu;  Wang Xiaoliang
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
Authors:  Wang Xiaoliang;  Hu Guoxin;  Ma Zhiyong;  Xiao Hongling;  Wang Cuimei;  Luo Weijun;  Liu Xinyu;  Chen Xiaojuan;  Li Jianping;  Li Jinmin;  Qian He;  Wang Zhanguo
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高性能1mm AlGaN/GaN功率HEMTs研制 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 1, 页码: 88-91
Authors:  邵刚;  刘新宇;  和致经;  刘健;  魏珂;  陈晓娟;  吴德馨;  王晓亮;  陈宏
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采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件 期刊论文
电子器件, 2005, 卷号: 28, 期号: 3, 页码: 479-481
Authors:  陈晓娟;  刘新宇;  和致经;  刘键;  邵刚;  魏珂;  吴德馨;  王晓亮;  周钧铭;  陈宏
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