SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Structure optimization of field-plate AlGaN/GaN HEMTs
Luo WJ (Luo Weijun); Wei K (Wei Ke); Chen XJ (Chen Xiaojuan); Li CZ (Li Chengzhan); Liu XY (Liu Xinyu); Wang XL (Wang Xiaoliang); Luo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
2007
Source PublicationMICROELECTRONICS JOURNAL
ISSNISSN: 0026-2692
Volume38Issue:2Pages:272-274
AbstractAlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC with varying field-plate length and gate-drain spacing were fabricated and analyzed. The classical small signal FET model and the well-known ColdFET method were used to extract the small signal parameters of the devices. Though the devices with field plates exhibited lower better f(T) characteristic, they did demonstrate better f(max), MSG and power density performances than the conventional devices without field plate. Besides, no independence of DC characteristic on field-plate length was observed. With the increase of the field-plate length and the gate-drain spacing, the characteristic of f(T) and f(max), degraded due to the large parasitic effects. Loadpull method was used to measure the microwave power performance of the devices. Under the condition of continuous wave at 5.4 GHz, an output power density of 4.69 W/mm was obtained for device with field-plate length of 0.5 mu m and gate-drain length of 2 mu m. (c) 2006 Elsevier Ltd. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, inst microelect, beijing 100029, peoples r china
KeywordGan
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-03-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/9596
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLuo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
Recommended Citation
GB/T 7714
Luo WJ ,Wei K ,Chen XJ ,et al. Structure optimization of field-plate AlGaN/GaN HEMTs[J]. MICROELECTRONICS JOURNAL,2007,38(2):272-274.
APA Luo WJ .,Wei K .,Chen XJ .,Li CZ .,Liu XY .,...&Luo, WJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn.(2007).Structure optimization of field-plate AlGaN/GaN HEMTs.MICROELECTRONICS JOURNAL,38(2),272-274.
MLA Luo WJ ,et al."Structure optimization of field-plate AlGaN/GaN HEMTs".MICROELECTRONICS JOURNAL 38.2(2007):272-274.
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