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Filter-based ultralow-frequency Raman measurement down to 2 cm−1 for fast Brillouin spectroscopy measurement 期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2017, 卷号: 88, 期号: 5, 页码: 053110
Authors:  Xue-Lu Liu;  He-Nan Liu;  Jiang-Bin Wu;  Han-Xu Wu;  Tao Zhang;  Wei-Qian Zhao;  Ping-Heng Tan
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"半导体集成化芯片系统基础研究"重大研究计划结束综述 期刊论文
中国科学基金, 2011, 卷号: 25, 期号: 2, 页码: 77-84
Authors:  陈弘毅;  陈宇;  孙玲;  郭睿倩;  潘庆;  何杰
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信息科学部国际合作与交流项目实施情况调查综述 期刊论文
科学学与科学技术管理, 2010, 卷号: 31, 期号: 8, 页码: 38-41
Authors:  陈宇;  孙玲;  徐琳;  郭睿倩;  潘庆;  何杰
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
Authors:  Wang Xiaoliang;  Hu Guoxin;  Ma Zhiyong;  Xiao Hongling;  Wang Cuimei;  Luo Weijun;  Liu Xinyu;  Chen Xiaojuan;  Li Jianping;  Li Jinmin;  Qian He;  Wang Zhanguo
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RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1116-1120
Authors:  Wang Xiaoling;  Wang Ciumei;  Hu Guoxin;  Wang Junxi;  Liu Xinyu;  Liu Jian;  Ran Junxue;  Qian He;  Zeng Yiping;  Li Jinmin
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X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 10, 页码: 1865-1870
Authors:  Wang Xiaoliang;  Liu Xinyu;  Hu Guoxin;  Wang Junxi;  Ma Zhiyong;  Wang Cuimei;  Li Jianping;  Ran Junxue;  Zheng Yingkui;  Qian He;  Zeng Yiping;  Li Jinmin
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Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 2, 页码: 121-125
Authors:  Wang Xiaoliang;  Hu Guoxin;  Wang Junxi;  Liu Xinyu;  Liu Hongxin;  Sun Dianzhao;  Zeng Yiping;  Qian He;  Li Jinmin;  Kong Meiying;  Lin Lanying
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MBE生长的跨导为186 mS/mm的AlGaN/GaN HEMT 期刊论文
固体电子学研究与进展, 2003, 卷号: 23, 期号: 4, 页码: 484-488
Authors:  王晓亮;  胡国新;  王军喜;  刘宏新;  孙殿照;  曾一平;  李晋闽;  孔梅影;  林兰英;  刘新宇;  刘键;  钱鹤
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低碳含量a-Si_(1-x)C_x∶H薄膜的化学键结构 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 5, 页码: 599
Authors:  王燕;  岳瑞峰;  韩和相;  廖显伯;  王永谦;  刁宏伟;  孔光临
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氢化非晶氧化硅薄膜光致发光起源的探讨 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 2, 页码: 162
Authors:  马智训;  廖显伯;  何杰;  程文超;  岳国珍;  王永谦;  刁宏伟;  孔光临
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