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InAs单晶衬底的表面形貌和化学成分分析 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 4, 页码: 878-882
Authors:  胡炜杰;  赵有文;  段满龙;  王应利;  王俊
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二次退火制备I I I-V族半导体量子点 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 3, 页码: 747-750
Authors:  肖虎;  孟宪权;  朱振华;  金鹏;  刘峰奇;  王占国
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MOCVD生长温度对氧化锌薄膜结构及发光性能的影响 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 1, 页码: 34-38,43
Authors:  王振华;  杨安丽;  刘祥林;  魏鸿源;  焦春美;  朱勤生;  杨少延;  王占国
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Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD 期刊论文
人工晶体学报, 2008, 卷号: 37, 期号: 6, 页码: 1401-1405
Authors:  CAI Fangfang;  WEI Hongyan;  FAN Haibo;  YANG Anli;  ZHANG Panfeng;  LIU Xianglin
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离子束溅射制备Si/Ge多层膜及红外吸收性能研究 期刊论文
人工晶体学报, 2006, 卷号: 35, 期号: 2, 页码: 280-284
Authors:  刘焕林;  郝瑞亭;  杨宇
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化学气相传输法生长ZnO单晶及性质研究 期刊论文
人工晶体学报, 2006, 卷号: 35, 期号: 2, 页码: 404-408
Authors:  赵有文;  董志远;  魏学成;  段满龙;  李晋闽
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缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 3, 页码: 466-470
Authors:  吴洁君;  韩修训;  李杰民;  黎大兵;  魏宏远;  康亭亭;  王晓晖;  刘祥林;  王占国
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LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 982-985
Authors:  SUN Guosheng;  WANG Lei;  GONG Quancheng;  GAO Xin;  LIU Xingfang;  ZENG Yiping;  LI JinminL
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分子束外延生长的InAs/GaAs自组织量子点发光特性 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 2, 页码: 384-386
Authors:  孙彦;  方志丹;  龚政;  苗振华;  牛智川
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Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 1006-1010
Authors:  SUN Guosheng;  NING Jin;  GAO Xin;  GONG Quancheng;  WANG Lei;  LIU Xingfang;  ZENG Yiping;  LI Jinmin
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