SEMI OpenIR

Browse/Search Results:  1-8 of 8 Help

Selected(0)Clear Items/Page:    Sort:
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 1, 页码: Art.No.015402
Authors:  Wu JJ (Wu Jiejun);  Zhang GY (Zhang Guoyi);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Wu, JJ, Peking Univ, Res Ctr Wide Gap Semicond, State Key Lab Artificial Microstruct & Mesoscop, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
Adobe PDF(529Kb)  |  Favorite  |  View/Download:1077/380  |  Submit date:2010/03/29
Chemical-vapor-deposition  
一种强磁场的霍尔效应测试装置及其测试方法 专利
专利类型: 发明, 申请日期: 2006-12-27, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张攀峰;  吴洁君;  胡卫国;  刘祥林
Adobe PDF(562Kb)  |  Favorite  |  View/Download:1018/200  |  Submit date:2009/06/11
一种在硅衬底上生长无裂纹Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2006-08-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴洁君;  韩修训;  李杰民;  黎大兵;  陆沅;  王晓晖
Adobe PDF(620Kb)  |  Favorite  |  View/Download:772/152  |  Submit date:2009/06/11
用于电调制光致发光光谱测量的样品架 专利
专利类型: 发明, 申请日期: 2006-07-05, 公开日期: 2009-06-04, 2009-06-11
Inventors:  丛光伟;  彭文琴;  吴洁君;  魏宏源;  刘祥林;  王占国
Adobe PDF(485Kb)  |  Favorite  |  View/Download:822/189  |  Submit date:2009/06/11
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
OPTICAL MATERIALS, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Authors:  Wu JJ (Wu Jiejun);  Han XX (Han Xiuxun);  Li JM (Li Jiemin);  Wei HY (Wei Hongyuan);  Cong GW (Cong Guangwei);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Hu TD (Hu Tiandou);  Wang HH (Wang Huanhua);  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
Adobe PDF(229Kb)  |  Favorite  |  View/Download:1226/387  |  Submit date:2010/04/11
In dopIng  Cracks  Si(111) Substrate  Lt-algan Interlayer  Metalorganic Chemical Vapor Deposition  Gan  Phase Epitaxy  Indium-surfactant  Optical-properties  Si(111)  Stress  Films  
Si 基GaN 及InAlGaN 四元合金生长和特性研究 学位论文
, 北京: 中国科学院半导体研究所, 2006
Authors:  吴洁君
Adobe PDF(3504Kb)  |  Favorite  |  View/Download:503/35  |  Submit date:2009/04/13
自适应柔性层制备无裂纹硅基Ⅲ族氮化物薄膜的方法 专利
专利类型: 发明, 申请日期: 2005-12-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  吴洁君;  黎大兵;  陆沅;  韩修训;  李杰民;  王晓辉;  刘祥林;  王占国
Adobe PDF(683Kb)  |  Favorite  |  View/Download:847/184  |  Submit date:2009/06/11
缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 3, 页码: 466-470
Authors:  吴洁君;  韩修训;  李杰民;  黎大兵;  魏宏远;  康亭亭;  王晓晖;  刘祥林;  王占国
Adobe PDF(656Kb)  |  Favorite  |  View/Download:1259/437  |  Submit date:2010/11/23