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Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes 期刊论文
Applied Physics Express, 2019, 卷号: 12, 期号: 1, 页码: 015505
Authors:  Qingqing Wu ;   Yanan Guo ;   Suresh Sundaram ;   Jianchang Yan ;   Liang Zhang ;   Tongbo Wei ;   Xuecheng Wei ;   Junxi Wang ;   Abdallah Ougazzaden;   Jinmin Li
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Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes 期刊论文
Applied Physics Express, 2018, 卷号: 12, 期号: 1, 页码: 015505
Authors:  Qingqing Wu;  Yanan Guo;  Suresh Sundaram;  Jianchang Yan;  Liang Zhang;  Tongbo Wei;  Xuecheng Wei;  Junxi Wang;  Abdallah Ougazzaden ;   Jinmin Li
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能带调控提高GaN/InGaN多量子阱蓝光LED效率研究 期刊论文
中国科学: 物理学 力学 天文学, 2015, 卷号: 45, 期号: 6, 页码: 067305
Authors:  张连;  魏学成;  路坤熠;  魏同波;  王军喜;  李晋闽
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Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes 期刊论文
JOURNAL OF LUMINESCENCE, 2014, 卷号: 155, 页码: 238-243
Authors:  Yang, Yujue;  Ma, Ping;  Wei, Xuecheng;  Yan, Dan;  Wang, Yafang;  Zeng, Yiping
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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates 期刊论文
IEEE PHOTONICS JOURNAL, 2014, 卷号: 6, 期号: 6, 页码: 8200610
Authors:  Wei, Tongbo;  Zhang, Lian;  Ji, Xiaoli;  Wang, Junxi;  Huo, Ziqiang;  Sun, Baojun;  Hu, Qiang;  Wei, Xuecheng;  Duan, Ruifei;  Zhao, Lixia;  Zeng, Yiping;  Li, Jinmin
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Characterization of nitride-based LED materials and devices using TOF-SIMS 期刊论文
SURFACE AND INTERFACE ANALYSIS, 2014, 卷号: 46, 页码: 299-302
Authors:  Wei, Xuecheng;  Zhao, Lixia;  Wang, Junxi;  Zeng, Yiping;  Li, Jinmin
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Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 13, 页码: 131101
Authors:  Ma J (Ma, Jun);  Ji XL (Ji, Xiaoli);  Wang GH (Wang, Guohong);  Wei XC (Wei, Xuecheng);  Lu HX (Lu, Hongxi);  Yi XY (Yi, Xiaoyan);  Duan RF (Duan, Ruifei);  Wang JX (Wang, Junxi);  Zeng YP (Zeng, Yiping);  Li JM (Li, Jinmin);  Yang FH (Yang, Fuhua);  Wang C (Wang, Chao);  Zou G (Zou, Gang)
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Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Xuecheng;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(jipanfeng@semi.ac.cn)
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Gallium Nitride  Growth Temperature  Semiconductor Quantum Wells  Surface Defects  
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 2, 页码: Art. No. 021001
Authors:  Ding K;  Zeng YP;  Duan RF;  Wei XC;  Wang JX;  Ma P;  Lu HX;  Cong PP;  Li JM;  Ding K Chinese Acad Sci Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: dingkai@red.semi.ac.cn
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Localization  Semiconductors  Emission  Boxes  Band  
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
Authors:  Wei TB;  Hu Q;  Duan RF;  Wei XC;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei TB Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn
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Hrxrd  Pl  Stacking Fault  Hvpe  Gan  Semipolar