SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAs单晶衬底的表面形貌和化学成分分析
胡炜杰; 赵有文; 段满龙; 王应利; 王俊
2010
Source Publication人工晶体学报
Volume39Issue:4Pages:878-882
Abstract利用原子力显微镜(AFM)、X射线光电子能谱(XPS)和俄歇电子能谱(AES)分别研究了InAs单晶抛光片的表面形貌和化学构成. 结果表明:机械化学抛光工艺条件和清洗腐蚀过程对InAs单晶抛光片表面的化学组分构成和表面粗糙度有很大的影响. 通常情况下, InAs单晶抛光片的表面氧化层中含有In_2O_3、As_2 O_5、As_2 O_3及元素As, 而随着As的挥发, 使抛光片表面化学计量比明显富铟. 通过适当的化学处理控制其表面的化学组分, 减小了表面粗糙度, 从而获得材料外延生长所要求的开盒即用InAs单晶衬底
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:3964120
Date Available2011-08-16
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21616
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
胡炜杰,赵有文,段满龙,等. InAs单晶衬底的表面形貌和化学成分分析[J]. 人工晶体学报,2010,39(4):878-882.
APA 胡炜杰,赵有文,段满龙,王应利,&王俊.(2010).InAs单晶衬底的表面形貌和化学成分分析.人工晶体学报,39(4),878-882.
MLA 胡炜杰,et al."InAs单晶衬底的表面形貌和化学成分分析".人工晶体学报 39.4(2010):878-882.
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