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Short to long-wave IR detectors based on InAs/GaSb superlattices in multi-color application 期刊论文
Proceedings of the SPIE, 2013, 卷号: 8907, 页码: 89070R
Authors:  Guo, Jie;  Wang, Guowei;  Lin, Xu;  Hao, Ruiting
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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
THIN SOLID FILMS, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Authors:  Hao RT (Hao Ruiting);  Deng SK (Deng Shukang);  Shen LX (Shen Lanxian);  Yang PZ (Yang Peizhi);  Tu JL (Tu Jielei);  Liao H (Liao Hua);  Xu YQ (Xu Yingqiang);  Niu ZC (Niu Zhichuan);  Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn
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Gallium Arsenide  Gallium Antimonide  Gallium Antimonide/aluminum Antimonide  Superlattices  Molecular Beam Epitaxy  Vapor-phase Epitaxy  Surface-morphology  Growth  Superlattices  Temperature  Relaxation  Detectors  Gaas(001)  Mocvd  Films  
MBE方法在GaAs(001)衬底上外延生长GaSb膜 期刊论文
功能材料, 2010, 卷号: 41, 期号: 4, 页码: 734-736
Authors:  郝瑞亭;  申兰先;  邓书康;  杨培志;  涂洁磊;  廖华;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-11-11, 公开日期: 4012
Inventors:  汤宝;  周志强;  郝瑞亭;  任正伟;  徐应强;  牛智川
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GaAs基InAs/GaSb超晶格红外光电探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2009-10-21, 公开日期: 4010
Inventors:  周志强;  郝瑞亭;  汤 宝;  任正伟;  徐应强;  牛智川
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GaAs基短周期InAs/GaSb超晶格红外探测器研究 期刊论文
红外与毫米波学报, 2009, 卷号: 28, 期号: 3, 页码: 165-167
Authors:  郭杰;  彭震宇;  鲁正雄;  孙维国;  郝瑞亭;  周志强;  许应强;  牛智川
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一种在砷化镓衬底上外延生长锑化镓的方法 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郝瑞亭;  周志强;  任正伟;  徐应强;  牛智川
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一种在砷化镓衬底上外延生长锑化镓的方法 专利
专利类型: 发明, 申请日期: 2008-03-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郝瑞亭;  周志强;  任正伟;  徐应强;  牛智川
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一种在砷化镓衬底上外延生长锑化镓的方法 专利
专利类型: 发明, 申请日期: 2008-03-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郝瑞亭;  周志强;  任正伟;  徐应强;  牛智川
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GaAs 基InAs/GaSb II 型超晶格红外探测材料与器件研究 学位论文
, 北京: 中国科学院半导体研究所, 2008
Authors:  郝瑞亭
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