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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters
期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors:
Meng Yulin
;
Wang Lianshan
;
Zhao Guijuan
;
Li Fangzheng
;
Li Huijie
;
Yang Shaoyan
;
Wang Zhanguo
Adobe PDF(1290Kb)
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View/Download:74/0
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Submit date:2019/11/15
The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors:
Li Fangzheng
;
Wang Lianshan
;
Zhao Guijuan
;
Meng Yulin
;
Li Huijie
;
Chen Yanan
;
Yang Shaoyan
;
Jin Peng
;
Wang Zhanguo
Adobe PDF(190Kb)
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View/Download:98/0
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Submit date:2019/11/15
Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors:
Wang Lianshan
;
Zhao Guijuan
;
Meng Yulin
;
Li Huijie
;
Yang Shaoyan
;
Wang Zhanguo
Adobe PDF(315Kb)
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View/Download:81/0
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Submit date:2019/11/15
基于二维材料的Ⅲ族氮化物外延
期刊论文
化学学报, 2017, 期号: 3, 页码: 271-279
Authors:
谭晓宇
;
杨少延
;
李辉杰
Adobe PDF(3684Kb)
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View/Download:144/2
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Submit date:2018/05/23
Scattering due to large cluster embedded in quantum wells
期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 5, 页码: 052105
Authors:
Liu, Changbo
;
Zhao, Guijuan
;
Liu, Guipeng
;
Song, Yafeng
;
Zhang, Heng
;
Jin, Dongdong
;
Li, Zhiwei
;
Liu, Xianglin
;
Yang, Shaoyan
;
Zhu, Qinsheng
;
Wang, Zhanguo
Adobe PDF(1002Kb)
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View/Download:825/222
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Submit date:2013/09/22
X-ray probe of GaN thin films grown on InGaN compliant substrates
期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 13, 页码: 132104
Authors:
Xu, Xiaoqing
;
Li, Yang
;
Liu, Jianming
;
Wei, Hongyuan
;
Liu, Xianglin
;
Yang, Shaoyan
;
Wang, Zhanguo
;
Wang, Huanhua
Adobe PDF(1508Kb)
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View/Download:1157/256
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Submit date:2013/08/27
Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface
期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 23
Authors:
Jia, Caihong
;
Chen, Yonghai
;
Liu, Xianglin
;
Yang, Shaoyan
;
Zhang, Weifeng
;
Wang, Zhanguo
Adobe PDF(1102Kb)
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View/Download:789/186
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Submit date:2013/09/22
Numerical study of radial temperature distribution in the AlN sublimation growth system
期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:
Li, Huijie
;
Liu, Xianglin
;
Feng, Yuxia
;
Wei, Hongyuan
;
Yang, Shaoyan
Adobe PDF(274Kb)
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View/Download:909/311
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Submit date:2013/08/27
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors
期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:
Li, Huijie
;
Liu, Guipeng
;
Wei, Hongyuan
;
Jiao, Chunmei
;
Wang, Jianxia
;
Zhang, Heng
;
Dong Jin, Dong
;
Feng, Yuxia
;
Yang, Shaoyan
;
Wang, Lianshan
;
Zhu, Qinsheng
;
Wang, Zhan-Guo
Adobe PDF(790Kb)
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View/Download:754/187
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Submit date:2014/03/17
Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2013, 卷号: 52, 页码: 150–154
Authors:
Liu, Changbo
;
Yang, Shaoyan
;
Shi, Kai
;
Liu, Guipeng
;
Zhang, Heng
;
Jin, Dongdong
;
Gu, Chengyan
;
Zhao, Guijuan
;
Sang, Ling
;
Liu, Xianglin
;
Zhu, Qinsheng
;
Wang, Zhanguo
Adobe PDF(634Kb)
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View/Download:458/99
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Submit date:2014/03/18