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高速无线收发机中高性能模拟基带电路研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  龚正
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A 1.2 v dual-channel 10 bit pipeline ADC in 55 nm CMOS for WLAN receivers 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 9, 页码: 095004
Authors:  Gong, Zheng;  Hu, Xueqing;  Yan, Jun;  Shi, Yin
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A wideband RF amplifier for satellite tuners 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 115002
Authors:  Hu, Xueqing;  Gong, Zheng;  Shi, Yin;  Dai, Fa Foster;  Hu, X.(
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Bicmos Technology  Differential Amplifiers  Linearization  Low Noise Amplifiers  Semiconducting Silicon  Silicon Alloys  Temperature Distribution  Tuners  Voltage Regulators  
A low power8th order elliptic low-pass filter for a CMMB tuner 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 95002
Authors:  Gong, Zheng;  Chen, Bei;  Hu, Xueqing;  Shi, Yin;  Dai, Fa Foster;  Gong, Z.(
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Bandpass Filters  Cutoff Frequency  Integrated Circuits  Low Pass Filters  Operational Amplifiers  Semiconducting Silicon  Signal Filtering And Prediction  Tuners  
1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
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Complex quantum ring structures formed by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.031921
Authors:  Huang SS (Huang Shesong);  Niu ZC (Niu Zhichuan);  Fang ZD (Fang Zhidan);  Ni HQ (Ni Haiqiao);  Gong Z (Gong Zheng);  Xia JB (Xia Jianbai);  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail:;;
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Room-temperature  Dots  
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
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Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文
Authors:  Kong LM (Kong Lingmin);  Cai JF (Cai Jiafa);  Wu ZY (Wu Zhengyun);  Gong Z (Gong Zheng);  Fang ZD (Fang Zhidan);  Niu ZC (Niu Zhichuan);  Wu, ZY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. E-mail:;
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Ingaas Layer  Inas Quantum Dots  Time-resolved Pl Spectra  1.3 Mu-m  Carrier Dynamics  Lasers  Growth  Wavelength  Emission  Islands  Layers  Size  
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
Authors:  Niu Zhichuan;  Ni Haiqiao;  Fang Zhidan;  Gong Zheng;  Zhang Shiyong;  Wu Donghai;  Sun Zheng;  Zhao Huan;  Peng Hongling;  Han Qin;  Wu Ronghan
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新奇半导体低维结构的自组织生长 期刊论文
物理, 2006, 卷号: 35, 期号: 8, 页码: 654-658
Authors:  牛智川;  黄社松;  龚政;  方志丹;  倪海桥;  孙宝权;  李树深;  夏建白
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