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320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice 期刊论文
Infrared Physics & Technology, 2017, 卷号: 82, 页码: 140–143
Authors:  Sun Yaoyao;  Han Xi;  Hao Hongyue;  Jiang Dongwei;  Guo Chunyan;  Jiang Zhi;  Lv Yuexi;  Wang Guowei;  Xu Yingqiang;  Niu Zhichuan ⇑
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Resonant tunneling diode with a multiplication region for light detection 期刊论文
OPTICS COMMUNICATIONS, 2014, 卷号: 331, 页码: 94-97
Authors:  Dong, Yu;  Wang, Guanglong;  Ni, Haiqiao;  Chen, Jianhui;  Gao, Fengqi;  Qiao, Zhongtao;  Niu, Zhichuan
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 218
Authors:  Li, Jie;  Guo, Hao;  Liu, Jun;  Tang, Jun;  Ni, Haiqiao;  Shi, Yunbo;  Xue, Chenyang;  Niu, Zhichuan;  Zhang, Wendong;  Li, Mifeng;  Yu, Ying
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Electron spin dynamics study of bulk p-GaAs: The screening effect 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 1, 页码: 012406
Authors:  Zhao, Chunbo;  Yan, Tengfei;  Ni, Haiqiao;  Niu, Zhichuan;  Zhang, Xinhui
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Novel Sb-based type-II superlattices infrared detectors 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2012, 卷号: 41, 期号: 12, 页码: 3141-3144
Authors:  Shi, Yanli;  He, Wenjin;  Zhang, Weifeng;  Wang, Yu;  Yuan, Jun;  Mo, Jinghui;  Feng, Jiangmin;  Hu, Rui;  Deng, Gongrong;  Xu, Yingqiang;  Niu, Zhichuan
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掺Te的GaSb薄膜分子束外延生长及缺陷特性 期刊论文
红外与毫米波学报, 2012, 卷号: 31, 期号: 4, 页码: 298-301
Authors:  陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川
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双层堆垛长波长InAs/GaAs量子点发光性质研究 期刊论文
光学学报, 2012, 卷号: 32, 期号: 1, 页码: 0125001-1-0125001-6
Authors:  魏全香,吴兵朋,任正伟,贺振宏,牛智川
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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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