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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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X-ray probe of GaN thin films grown on InGaN compliant substrates
期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 13, 页码: 132104
Authors:
Xu, Xiaoqing
;
Li, Yang
;
Liu, Jianming
;
Wei, Hongyuan
;
Liu, Xianglin
;
Yang, Shaoyan
;
Wang, Zhanguo
;
Wang, Huanhua
Adobe PDF(1508Kb)
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View/Download:1157/256
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Submit date:2013/08/27
Numerical study of radial temperature distribution in the AlN sublimation growth system
期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:
Li, Huijie
;
Liu, Xianglin
;
Feng, Yuxia
;
Wei, Hongyuan
;
Yang, Shaoyan
Adobe PDF(274Kb)
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View/Download:909/311
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Submit date:2013/08/27
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors
期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:
Li, Huijie
;
Liu, Guipeng
;
Wei, Hongyuan
;
Jiao, Chunmei
;
Wang, Jianxia
;
Zhang, Heng
;
Dong Jin, Dong
;
Feng, Yuxia
;
Yang, Shaoyan
;
Wang, Lianshan
;
Zhu, Qinsheng
;
Wang, Zhan-Guo
Adobe PDF(790Kb)
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View/Download:754/187
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Submit date:2014/03/17
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:
Liu JM
;
Liu XL
;
Li CM
;
Wei HY
;
Guo Y
;
Jiao CM
;
Li ZW
;
Xu XQ
;
Song HP
;
Yang SY
;
Zhu QS
;
Wang ZG
;
Yang AL
;
Yang TY
;
Wang HH
;
Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn
;
xlliu@semi.ac.cn
Adobe PDF(4152Kb)
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View/Download:1308/335
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Submit date:2011/07/05
Cathodoluminescence Characterization
Gallium Nitride
Stresses
Layers
Heterostructure
Deposition
Constants
Mechanism
Sapphire
Strain
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:
Shi K
;
Yang AL
;
Wang J
;
Song HP
;
Xu XQ
;
Sang L
;
Wei HY
;
Yang SY
;
Liu XL
;
Zhu QS
;
Wang ZG
;
Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn
;
xlliu@semi.ac.cn
Adobe PDF(602Kb)
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View/Download:1520/487
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Submit date:2011/07/05
Metal Organic Chemical Vapor Deposition
Sapphire
Zinc Compounds
Semiconducting Ii-vi Materials
Vapor-phase Epitaxy
Optical-properties
Zno Nanorods
Raman-scattering
M-plane
Films
Photoluminescence
Deposition
Nanowires
Fields
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:
Shi K
;
Li DB
;
Song HP
;
Guo Y
;
Wang J
;
Xu XQ
;
Liu JM
;
Yang AL
;
Wei HY
;
Zhang B
;
Yang SY
;
Liu XL
;
Zhu QS
;
Wang ZG
;
Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn
;
lidb@ciomp.ac.cn
;
xlliu@semi.ac.cn
Adobe PDF(343Kb)
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View/Download:1877/418
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Submit date:2011/07/05
Chemical-vapor-deposition
Core-level Photoemission
Sb-doped Sno2
Inn
Growth
Gan
Naxwo3
Alloys
Green
State
GaN grown with InGaN as a weakly bonded layer
期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:
Xu XQ
;
Guo Y
;
Liu XL
;
Liu JM
;
Song HP
;
Zhang BA
;
Wang J
;
Yang SY
;
Wei HY
;
Zhu QS
;
Wang ZG
;
Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn
;
xlliu@semi.ac.cn
;
qszhu@semi.ac.cn
Adobe PDF(524Kb)
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View/Download:1770/465
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Submit date:2011/07/05
Chemical-vapor-deposition
Si(001) Substrate
Strain
Epitaxy
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Authors:
Wang J
;
Liu XL
;
Yang AL
;
Zheng GL
;
Yang SY
;
Wei HY
;
Zhu QS
;
Wang ZG
;
Liu, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xlliu@semi.ac.cn
;
why@semi.ac.cn
Adobe PDF(659Kb)
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View/Download:1490/500
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Submit date:2011/07/05
Sensitized Solar-cells
Photocatalyzed Transformation
Chloroaromatic Derivatives
Zinc-oxide
Films
Powder
Phenol
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 10, 页码: Art. No. 104510
Authors:
Xu XQ (Xu Xiaoqing)
;
Liu XL (Liu Xianglin)
;
Guo Y (Guo Yan)
;
Wang J (Wang Jun)
;
Song HP (Song Huaping)
;
Yang SY (Yang Shaoyan)
;
Wei HY (Wei Hongyuan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
;
Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxq@semi.ac.cn
;
xlliu@red.semi.ac.cn
;
qszhu@semi.ac.cn
Adobe PDF(305Kb)
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View/Download:1273/482
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Submit date:2010/06/18
Photoemission-spectroscopy
Precise Determination
Ga-face
Surface
Aln
Heterojunctions
Discontinuity
Level
A study of indium incorporation in In-rich InGaN grown by MOVPE
期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
Authors:
Guo Y
;
Liu XL
;
Song HP
;
Yang AL
;
Xu XQ
;
Zheng GL
;
Wei HY
;
Yang SY
;
Zhu QS
;
Wang ZG
;
Guo, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Tingshua E Rd 35,POB 912, Beijing 100083, Peoples R China.E-mail Address: guoyan@semi.ac.cn
;
xlliu@semi.ac.cn
Adobe PDF(501Kb)
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View/Download:1785/750
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Submit date:2010/04/22
Movpe
In-rich Ingan
Indium Incorporation
Molecular-beam Epitaxy
Chemical-vapor-deposition
Critical Thickness
Droplet Formation
Phase-separation
Temperature
Films
Heterostructures
Immiscibility
Inxga1-xn