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X-ray probe of GaN thin films grown on InGaN compliant substrates 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 13, 页码: 132104
Authors:  Xu, Xiaoqing;  Li, Yang;  Liu, Jianming;  Wei, Hongyuan;  Liu, Xianglin;  Yang, Shaoyan;  Wang, Zhanguo;  Wang, Huanhua
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Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Authors:  Li, Huijie;  Liu, Xianglin;  Feng, Yuxia;  Wei, Hongyuan;  Yang, Shaoyan
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Authors:  Wang J;  Liu XL;  Yang AL;  Zheng GL;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Liu, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xlliu@semi.ac.cn;  why@semi.ac.cn
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Sensitized Solar-cells  Photocatalyzed Transformation  Chloroaromatic Derivatives  Zinc-oxide  Films  Powder  Phenol  
GaN grown with InGaN as a weakly bonded layer 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:  Xu XQ;  Guo Y;  Liu XL;  Liu JM;  Song HP;  Zhang BA;  Wang J;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Chemical-vapor-deposition  Si(001) Substrate  Strain  Epitaxy  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
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Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 10, 页码: Art. No. 104510
Authors:  Xu XQ (Xu Xiaoqing);  Liu XL (Liu Xianglin);  Guo Y (Guo Yan);  Wang J (Wang Jun);  Song HP (Song Huaping);  Yang SY (Yang Shaoyan);  Wei HY (Wei Hongyuan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxq@semi.ac.cn;  xlliu@red.semi.ac.cn;  qszhu@semi.ac.cn
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Photoemission-spectroscopy  Precise Determination  Ga-face  Surface  Aln  Heterojunctions  Discontinuity  Level  
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
Authors:  Guo Y;  Liu XL;  Song HP;  Yang AL;  Xu XQ;  Zheng GL;  Wei HY;  Yang SY;  Zhu QS;  Wang ZG;  Guo, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Tingshua E Rd 35,POB 912, Beijing 100083, Peoples R China.E-mail Address: guoyan@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(501Kb)  |  Favorite  |  View/Download:1630/749  |  Submit date:2010/04/22
Movpe  In-rich Ingan  Indium Incorporation  Molecular-beam Epitaxy  Chemical-vapor-deposition  Critical Thickness  Droplet Formation  Phase-separation  Temperature  Films  Heterostructures  Immiscibility  Inxga1-xn