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Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
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Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
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Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Fang, ZD (Fang, Zhidan);  Gong, M (Gong, Meng);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Quantum Dots  Photoluminescence  Combination Layer  1.3 Mu-m  Lasers  Inalas  
原子氢辅助分子束外延生长技术及InAs/GaAs 纳米结构的形貌可控性研究 学位论文
, 北京: 中国科学院半导体研究所, 2005
Authors:  苗振华
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分子束外延生长的InAs/GaAs自组织量子点发光特性 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 2, 页码: 384-386
Authors:  孙彦;  方志丹;  龚政;  苗振华;  牛智川
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快速热退火对高应变InGaAs/GaAs量子阱的影响 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1749-1752
Authors:  苗振华;  徐应强;  张石勇;  吴东海;  赵欢;  牛智川
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In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点 期刊论文
红外与毫米波学报, 2005, 卷号: 24, 期号: 5, 页码: 324-327
Authors:  方志丹;  龚政;  苗振华;  牛智川;  沈光地
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原子氢辅助分子束外延生长台阶状表面形貌的研究 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 2, 页码: 148-152
Authors:  周大勇;  澜清;  孔云川;  苗振华;  封松林;  牛智川
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1.3微米InGaAs/GaAs自组织量子点激光器材料及生长该材料的方法 专利
专利类型: 发明, 申请日期: 2002-10-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  封松林;  杨富华;  王晓东;  汪辉;  李树英;  苗振华;  李树深
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1.3微米发光自组织InAs/GaAs量子点的电致发光研究 期刊论文
人工晶体学报, 2002, 卷号: 31, 期号: 6, 页码: 551-554
Authors:  孔云川;  周大勇;  澜清;  刘金龙;  苗振华;  封松林;  牛智川
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