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Scattering due to large cluster embedded in quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 5, 页码: 052105
Authors:  Liu, Changbo;  Zhao, Guijuan;  Liu, Guipeng;  Song, Yafeng;  Zhang, Heng;  Jin, Dongdong;  Li, Zhiwei;  Liu, Xianglin;  Yang, Shaoyan;  Zhu, Qinsheng;  Wang, Zhanguo
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Authors:  Li, Huijie;  Liu, Guipeng;  Wei, Hongyuan;  Jiao, Chunmei;  Wang, Jianxia;  Zhang, Heng;  Dong Jin, Dong;  Feng, Yuxia;  Yang, Shaoyan;  Wang, Lianshan;  Zhu, Qinsheng;  Wang, Zhan-Guo
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Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
SOLID STATE COMMUNICATIONS, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
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Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells 期刊论文
Physica E: Low-dimensional Systems and Nanostructures, 2013, 卷号: 52, 页码: 150–154
Authors:  Liu, Changbo;  Yang, Shaoyan;  Shi, Kai;  Liu, Guipeng;  Zhang, Heng;  Jin, Dongdong;  Gu, Chengyan;  Zhao, Guijuan;  Sang, Ling;  Liu, Xianglin;  Zhu, Qinsheng;  Wang, Zhanguo
Adobe PDF(634Kb)  |  Favorite  |  View/Download:395/99  |  Submit date:2014/03/18
Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
THIN SOLID FILMS, 2013, 卷号: 534, 页码: 655-658
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
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Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113712
Authors:  Li HJ (Li, Huijie);  Liu XL (Liu, Xianglin);  Wang JX (Wang, Jianxia);  Jin DD (Jin, Dongdong);  Zhang H (Zhang, Heng);  Yang SY (Yang, Shaoyan);  Liu SM (Liu, Shuman);  Mao W (Mao, Wei);  Hao Y (Hao, Yue);  Zhu QS (Zhu, QinSheng);  Wang ZG (Wang, Zhanguo)
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Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 562
Authors:  Wei W (Wei, Wei);  Qin ZX (Qin, Zhixin);  Fan SF (Fan, Shunfei);  Li ZW (Li, Zhiwei);  Shi K (Shi, Kai);  Zhu QS (Zhu, Qinsheng);  Zhang GY (Zhang, Guoyi)
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Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 8, 页码: 082101
Authors:  Liu, Guipeng;  Wu, Ju;  Zhao, Guijuan;  Liu, Shuman;  Mao, Wei;  Hao, Yue;  Liu, Changbo;  Yang, Shaoyan;  Liu, Xianglin;  Zhu, Qinsheng;  Wang, Zhanguo
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Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors 期刊论文
Journal of Applied Physics, 2012, 卷号: 112, 页码: 024515
Authors:  Ji, Dong;  Lu, Yanwu;  Liu, Bing;  Jin, Guangri;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
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Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文
Applied Physics Letters, 2012, 卷号: 100, 期号: 13, 页码: 132105
Authors:  Ji, Dong;  Liu, Bing;  Lu, Yanwu;  Liu, Guipeng;  Zhu, Qinsheng;  Wang, Zhanguo
Adobe PDF(979Kb)  |  Favorite  |  View/Download:543/193  |  Submit date:2013/05/13