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RTD与PHEMT集成的几个关键工艺 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 390-394
Authors:  王建林;  刘忠立;  王良臣;  曾一平;  杨富华;  白云霞
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气源分子束外延生长锗硅异质结双极晶体管材料掺杂方法 专利
专利类型: 发明, 申请日期: 2002-10-16, 公开日期: 2009-06-04, 2009-06-11
Inventors:  黄大定;  李建平;  高斐;  林燕霞;  孙殿照;  刘金平;  朱世荣;  孔梅影
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Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
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Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Ctr Mat Sci,Inst Semicond,Beijing 10083,Peoples R China.
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Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
气源分子束外延生长SiGe/Si材料的性质及HBT器件应用 学位论文
, 北京: 中国科学院半导体研究所, 2000
Authors:  林燕霞
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Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Authors:  Liu JP;  Huang DD;  Li JP;  Lin YX;  Sun DZ;  Kong MY;  Huang DD,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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N-type Doping  P-type Doping  Si/sige  Hbt  Gsmbe  Si  
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gsmbe  Sige Alloy  Doping  Sims  Hbt  Current Gain  Si  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Sun DZ;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Si Growth Rate  p Doping  Ph3 Flow Rate  p Segregation  Gsmbe  Chemical-vapor-deposition  Si1-xgex  Phosphorus  Si2h6  Disilane  Si(100)  Mbe  
Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 11, 页码: 1050
Authors:  Lin YX(林燕霞);  Huang DD(黄大定);  Zhang XL(张秀兰);  Liu JP(刘金平);  Li JP(李建平);  Gao F(高飞);  Sun DZ(孙殿照);  Ceng YP(曾一平);  Kong MY(孔梅影)
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Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 9, 页码: 6920-6922
Authors:  Liu JP;  Huang DD;  Li JP;  Lin YX;  Sun DZ;  Kong MY;  Liu JP,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gas-source Mbe  Kinetics  Adsorption  Silicon  Si(100)  Mechanism  Si2h6  Phase  Films