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Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering  
GaN外延膜厚度的x射线双晶衍射测量 期刊论文
中国科学. G辑,物理, 2003, 卷号: 33, 期号: 2, 页码: 122-125
Authors:  冯淦;  朱建军;  沈晓明;  张宝顺;  赵德刚;  王玉田;  杨辉;  梁骏吾
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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GaN横向外延中晶面倾斜的形成机制 期刊论文
中国科学. A辑,数学, 2002, 卷号: 32, 期号: 8, 页码: 737-742
Authors:  冯淦;  郑新和;  朱建军;  沈晓明;  张宝顺;  赵德刚;  孙元平;  张泽洪;  王玉田;  杨辉;  梁骏吾
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UHV/CVD生长SiGe/Si异质结构材料 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 3, 页码: 250
Authors:  成步文;  李代宗;  黄昌俊;  于卓;  张春晖;  王玉田;  余金中;  王启明
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低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 3, 页码: 218
Authors:  陈博;  王圩;  汪孝杰;  张静媛;  朱洪亮;  周帆;  王玉田;  马朝华;  张子莹;  刘国利
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LP-MOVPE生长的低阈值1.3μm InGaAsP/InP 压、张应变交替 MQW 激光器特性 期刊论文
光子学报, 1997, 卷号: 26, 期号: 5, 页码: 418
Authors:  王志杰;  陈博;  王圩;  张济志;  朱洪亮;  周帆;  王玉田;  金才政;  马朝华
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X射线双晶衍射在分布布喇格反射镜研制中的应用 期刊论文
半导体学报, 1996, 卷号: 17, 期号: 4, 页码: 257
Authors:  林世鸣;  高洪海;  张春辉;  吴荣汉;  庄岩;  王玉田
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