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Mn-AlInN: a new diluted magnetic semiconductor 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 卷号: 96, 期号: 4, 页码: 979-984
Authors:  Majid A;  Sharif R;  Zhu JJ;  Ali A;  Majid A Quaid I Azam Univ Dept Phys Adv Mat Phys Lab Islamabad Pakistan. E-mail Address: abdulmajid40@yahoo.com;  akbar@qau.edu.pk
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Films  Growth  Gan  Cr  
Room Temperature Ferromagnetism of Mn Implanted AlInN 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 4, 页码: Art. No. 040202
Authors:  Majid A;  Sharif R;  Ali A;  Zhu JJ;  Majid A Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: akbar@qau.edu.pk
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Magnetic-properties  Semiconductors  Gan  Cr  Alloys  Growth  Films  
Effect of beta-irradiation on photoluminescence of MOCVD grown GaN 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 卷号: 20, 期号: 1, 页码: 14-16
Authors:  Majid A;  Israr M;  Zhu JJ;  Ali A;  Ali A Quaid I Azam Univ Dept Phys Adv Mat Phys Lab Islamabad Pakistan.
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Electron-irradiation  Gallium Nitride  Thin-films  
Structural characterization of mn implanted AlInN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 11, 页码: Art. No. 115404
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Majid, A, Quaid I Azam Univ, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: abdulmajid40@yahoo.com;  akbar@qau.edu.pk
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Ion-implantation  
An evidence of defect gettering in GaN 期刊论文
PHYSICA B-CONDENSED MATTER, 2008, 卷号: 403, 期号: 13-16, 页码: 2495-2499
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Yang H;  Ali, A, Quaid I Azam Univ, Adv Mat Phys Lab, Dept Phys, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk
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Gan  
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 2, 页码: Art. No. 025107
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Liu W;  Lu GJ;  Liu WB;  Zhang LQ;  Liu ZS;  Zhao DG;  Zhang SM;  Jiang DS;  Yang H;  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk
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Luminescence  
Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering  
Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233
Authors:  Majid A (Majid Abdul);  Ali A (Ali Akbar);  Zhu JJ (Zhu Jianjun);  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: aarandhawa@yahoo.com
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Chemical-vapor-deposition