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Effect of beta-irradiation on photoluminescence of MOCVD grown GaN 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2009, 卷号: 20, 期号: 1, 页码: 14-16
Authors:  Majid A;  Israr M;  Zhu JJ;  Ali A;  Ali A Quaid I Azam Univ Dept Phys Adv Mat Phys Lab Islamabad Pakistan.
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Electron-irradiation  Gallium Nitride  Thin-films  
Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering