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A comparison study of canonical correlation analysis based methods for detecting steady-state visual evoked potentials 期刊论文
PLoS ONE, 2015, 卷号: 10, 期号: 10, 页码: e0140703
Authors:  M Nakanishi;  Y Wang;  YT Wang;  TP Jung
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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4, 页码: 044507
Authors:  Luan, CB;  Lin, ZJ;  Lv, YJ;  Zhao, JT;  Wang, YT;  Chen, H;  Wang, ZG
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An Impedance Immunosensor for Detection of H5 Subtype Avian Influenza Virus 期刊论文
CHINESE JOURNAL OF ANALYTICAL CHEMISTRY, 2012, 卷号: 40, 期号: 10, 页码: 1507-1513
Authors:  Yan XF (Yan Xiao-Fei);  Li YT (Li Yun-Tao);  Wang RH (Wang Rong-Hui);  Lin JH (Lin Jian-Han);  Wen XH (Wen Xin-Hua);  Wang MH (Wang Mao-Hua);  An D (An Dong);  Han WJ (Han Wei-Jing);  Yu YD (Yu Yu-De);  Li YB (Li Yan-Bin)
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A complete genome assembly of Glaciecola mesophila sp nov sequenced by using BIGIS-4 sequencer system 期刊论文
SCIENCE CHINA-LIFE SCIENCES, 2011, 卷号: 54, 期号: 9, 页码: 835-840
Authors:  Yuan LN;  Ren LF;  Li YT;  Han WJ;  Yu Y;  Chu YN;  Liu GM;  Yu D;  Teng MJ;  Wang L;  Wang XM;  Zhou XG;  Yu YD;  Yu J;  Yu, YD (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China, yudeyu@semi.ac.cn;  junyu@big.ac.cn
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Alteromonas-macleodii  Bacterium  Seawater  Genes  Sea  
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 10, 页码: Art. No. 106802
Authors:  Guo X (Guo Xi);  Wang H (Wang Hui);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
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Ingan  In-plane Grazing Incidence X-ray Diffraction  Reciprocal Space Mapping  Biaxial Strain  Critical Layer Thickness  Optical-properties  Lattice-constants  Gan  Heterostructures  Alloys  Wells  
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
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In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 2, 页码: Art. No. 026804
Authors:  Lu GJ (Lu Guo-Jun);  Zhu JJ (Zhu Jian-Jun);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition  Al1-xinxn  Gradual Variation In Composition  Optical Reflectance Spectra  X-ray-diffraction  Phase Epitaxy  Relaxation  Films  Heterostructures  Separation  Dynamics  Alloys  Region  Layers  
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 3, 页码: Art. No. 036801
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Chen GF (Chen Gui-Feng);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhao DG (Zhao De-Gang);  Wang H (Wang Hui);  Wang YT (Wang Yu-Tian);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Gan  Si (111) Substrate  Metalorganic Chemical Vapour Deposition  Aln Buffer Layer  Algan Interlayer  : Vapor-phase Epitaxy  Crack-free Gan  Stress-control  Si(111)  Deposition  Alxga1-xn  Film  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
Pipeline Architecture and Parallel Computation-Based Real-Time Stereovision Tracking System for Surgical Navigation 期刊论文
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2010, 卷号: 59, 期号: 5, 页码: 1240-1250 Sp. Iss.
Authors:  Zhou P (Zhou Ping);  Liu Y (Liu Yue);  Wang YT (Wang Yongtian);  Zhou, P, Beijing Inst Technol, Ctr Res Optoelect Informat Technol & Color Engn, Beijing 100081, Peoples R China. 电子邮箱地址: savagezp@hotmail.com
Adobe PDF(656Kb)  |  Favorite  |  View/Download：1208/328  |  Submit date：2010/04/26
Parallel Processing  Pipeline Processing  Real Time Systems  Stereovision  Tracking