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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:
Wang LJ
;
Zhang SM
;
Zhu JH
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Jiang DS
;
Wang YT
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)
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View/Download:1409/361
  |  
Submit date:2010/04/05
Gan
Light Emitting Diode
Surface Treatment
Leakage Current
Threading Dislocation Densities
Layers
Ni/au
Leds
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Jia QJ
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(418Kb)
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View/Download:1759/452
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Submit date:2010/04/04
Nitride Materials
Crystal Growth
X-ray Diffraction
Time-resolved Photoluminescence
Light-emitting-diodes
Piezoelectric Fields
Laser-diodes
Dependence
Recombination
Polarization
Dynamics
Growth
Mocvd
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响
期刊论文
物理学报, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:
张爽
;
赵德刚
;
刘宗顺
;
朱建军
;
张书明
;
王玉田
;
段俐宏
;
刘文宝
;
江德生
;
杨辉
Adobe PDF(598Kb)
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View/Download:1246/328
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Submit date:2010/11/23
Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 卷号: 487, 期号: 1-2, 页码: 400-403
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Guo X
;
Liu ZS
;
Zhang SM
;
Wang YT
;
Yang H
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
Adobe PDF(304Kb)
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View/Download:1074/357
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Submit date:2010/03/08
Nitride Materials
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2, 页码: Art. No. 026102
Authors:
Sun X
;
Jiang DS
;
Liu WB
;
Zhu JH
;
Wang H
;
Liu ZS
;
Zhu JJ
;
Wang YT
;
Zhao DG
;
Zhang SM
;
You LP
;
Ma RM
;
Yang H
;
Sun X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: xiansun@semi.ac.cn
;
dsjiang@red.semi.ac.cn
Adobe PDF(280Kb)
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View/Download:1266/371
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Submit date:2010/03/08
Light-emitting-diodes
Fundamental-band Gap
Nanowires
Heterostructures
Nanostructures
Mocvd
Polar
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:
Zhao DG
;
Jiang DS
;
Zhu JJ
;
Liu ZS
;
Wang H
;
Zhang SM
;
Wang YT
;
Yang H
;
Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
Adobe PDF(203Kb)
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View/Download:1385/438
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Submit date:2010/03/08
Edge Dislocations
Gallium Compounds
Iii-v Semiconductors
Impurities
Photoluminescence
Semiconductor Doping
Semiconductor Thin Films
Silicon
Wide Band Gap Semiconductors
X-ray Diffraction
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 1, 页码: Art. No. 015108
Authors:
Liu WB
;
Zhao DG
;
Sun X
;
Zhang S
;
Jiang DS
;
Wang H
;
Zhang SM
;
Liu ZS
;
Zhu JJ
;
Wang YT
;
Duan LH
;
Yang H
;
Liu WB Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wbliu@semi.ac.cn
;
dgzhao@red.semi.ac.cn
Adobe PDF(452Kb)
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View/Download:1293/496
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Submit date:2010/03/08
Surface-morphology
Detectors
Growth
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 14, 页码: Art. No. 145410
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(853Kb)
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View/Download:1275/426
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Submit date:2010/03/08
Molecular-beam Epitaxy
Phase Epitaxy
Quantum Dots
Band-gap
Growth
Surfaces
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 5, 页码: Art. No. 055001
Authors:
Wang H
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(957Kb)
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View/Download:1030/234
  |  
Submit date:2010/03/08
Molecular-beam Epitaxy
Electron-transport
Band-gap
Films
Sapphire
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 7, 页码: Art. No. 075004
Authors:
Wang H
;
Wang LL
;
Sun X
;
Zhu JH
;
Liu WB
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang YT
;
Zhang SM
;
Yang H
;
Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: wangh@red.semi.ac.cn
Adobe PDF(335Kb)
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View/Download:1025/297
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Submit date:2010/03/08
Electron-transport
Phase Epitaxy
Nitride Inn
Band-gap