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砷化镓基1.5微米量子阱结构及其外延生长方法 专利
专利类型: 发明, 申请日期: 2007-04-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  倪海桥;  韩勤;  张石勇;  吴东海;  赵欢;  杨晓红;  彭红玲;  周志强;  熊永华;  吴荣汉
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1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
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可提高砷化铝氧化均匀性的外延片承载装置 专利
专利类型: 实用新型, 申请日期: 2006-05-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  佟存柱;  牛智川;  韩勤;  杜云;  吴荣汉
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1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
Authors:  Niu Zhichuan;  Ni Haiqiao;  Fang Zhidan;  Gong Zheng;  Zhang Shiyong;  Wu Donghai;  Sun Zheng;  Zhao Huan;  Peng Hongling;  Han Qin;  Wu Ronghan
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1.55μm低温生长GaAs谐振腔增强型探测器 期刊论文
光子学报, 2006, 卷号: 35, 期号: 4, 页码: 549-551
Authors:  韩勤;  彭红玲;  杜云;  倪海桥;  赵欢;  牛智川;  吴荣汉
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高铟组分镓砷/铟镓砷量子阱结构及其制备方法 专利
专利类型: 发明, 申请日期: 2005-06-08, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  徐晓华;  倪海桥;  徐应强;  韩勤;  吴荣汉
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GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器 期刊论文
光电子·激光, 2005, 卷号: 16, 期号: 2, 页码: 159-163
Authors:  周震;  杨晓红;  韩勤;  杜云;  彭红玲;  吴荣汉;  黄永清;  任晓敏
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A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1087-1093
Authors:  Zhou Zhen;  Han Qin;  Du Yun;  Yang Xiaohong;  Wu Ronghan;  Huang Yongqing;  Ren Xiaomin
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Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1860-1864
Authors:  Niu Zhichuan;  Han Qin;  Ni Haiqiao;  Yang Xiaohong;  Xu Yingqiang;  Du Yun;  Zhang Shiyong;  Peng Hongling;  Zhao Huan;  Wu Donghai;  Li Shuying;  He Zhenhong;  Ren Zhengwei;  Wu Ronghan
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1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析 期刊论文
物理学报, 2005, 卷号: 54, 期号: 8, 页码: 3651-3656
Authors:  佟存柱;  牛智川;  韩勤;  吴荣汉
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