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Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Authors:  Sun YP (Sun Yuanping);  Sun Y (Sun Yuanping);  Cho YH (Cho Yong-Hoon);  Wang H (Wang Hui);  Wang LL (Wang Lili);  Zhang SM (Zhang Shuming);  Yang H (Yang Hui);  Sun, YP, Yantai Univ, Inst Sci & Technol Optoelect Informat, Yantai 264005, Peoples R China. 电子邮箱地址: ypsun@ytu.edu.cn
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Inn  Burstein-moss Effect  Quantum Confinement Effect  Activation Energy  Fundamental-band Gap  Well Structures  Emission  Single  
Pt/n-GaN肖特基接触的退火行为 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 3, 页码: 279-283
Authors:  张泽洪;  孙元平;  赵德刚;  段俐宏;  王俊;  沈晓明;  冯淦;  冯志宏;  杨辉
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立方相GaN的持续光电导 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 1, 页码: 34-38
Authors:  张泽洪;  赵德刚;  孙元平;  冯志宏;  沈晓明;  张宝顺;  冯淦;  郑新和;  杨辉
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立方相GaN的晶片键合技术以及金属接触性质的研究 学位论文
, 北京: 中国科学院半导体研究所, 2002
Authors:  孙元平
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Growth of Cubic GaN by MOCVD at High Temperature 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 120-123
Authors:  Fu Yi;  Sun Yuanping;  Shen Xiaoming;  Li Shunfeng;  Feng Zhihong;  Duan Lihong;  Wang Hai;  Yang Hui
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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GaN横向外延中晶面倾斜的形成机制 期刊论文
中国科学. A辑,数学, 2002, 卷号: 32, 期号: 8, 页码: 737-742
Authors:  冯淦;  郑新和;  朱建军;  沈晓明;  张宝顺;  赵德刚;  孙元平;  张泽洪;  王玉田;  杨辉;  梁骏吾
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Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 7, 页码: 707-712
Authors:  Shen Xiaoming;  Feng Zhihong;  Feng Gan;  Fu Yi;  Zhang Baoshun;  Sun Yuanping;  Zhang Zehong;  Yang Hui
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GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 881-885
Authors:  沈晓明;  张秀兰;  孙元平;  赵德刚;  冯淦;  张宝顺;  张泽洪;  冯志宏;  杨辉
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GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 9, 页码: 1001-1005
Authors:  孙元平;  张泽洪;  赵德刚;  冯志宏;  付羿;  张书明;  杨辉
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