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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:  Liu, GP;  Wu, J;  Lu, YW;  Zhao, GJ;  Gu, CY;  Liu, CB;  Sang, L;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 2, 页码: Art. No. 026804
Authors:  Lu GJ (Lu Guo-Jun);  Zhu JJ (Zhu Jian-Jun);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address:
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Metalorganic Chemical Vapor Deposition  Al1-xinxn  Gradual Variation In Composition  Optical Reflectance Spectra  X-ray-diffraction  Phase Epitaxy  Relaxation  Films  Heterostructures  Separation  Dynamics  Alloys  Region  Layers  
与GaN晶格匹配的AlInN材料的MOCVD生长及其性质研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  卢国军
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Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 2, 页码: Art. No. 025107
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Liu W;  Lu GJ;  Liu WB;  Zhang LQ;  Liu ZS;  Zhao DG;  Zhang SM;  Jiang DS;  Yang H;  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址:
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Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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一种生长AlInN单晶外延膜的方法 专利
专利类型: 发明, 专利号: CN200810225783.8, 公开日期: 2011-08-30
Inventors:  卢国军;  朱建军;  赵德刚;  刘宗顺;  张书明;  杨辉
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